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Hong, Soon-Ku, Ko, Hang-Ju, Chen, Yefan, Hanada, Takashi, Yao, Takafumi (2000) Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3. Applied Surface Science, 159. 441-448 doi:10.1016/s0169-4332(00)00053-2

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Reference TypeJournal (article/letter/editorial)
TitleControl and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3
JournalApplied Surface Science
AuthorsHong, Soon-KuAuthor
Ko, Hang-JuAuthor
Chen, YefanAuthor
Hanada, TakashiAuthor
Yao, TakafumiAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00053-2Search in ResearchGate
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Mindat Ref. ID9901893Long-form Identifiermindat:1:5:9901893:7
GUID0
Full ReferenceHong, Soon-Ku, Ko, Hang-Ju, Chen, Yefan, Hanada, Takashi, Yao, Takafumi (2000) Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3. Applied Surface Science, 159. 441-448 doi:10.1016/s0169-4332(00)00053-2
Plain TextHong, Soon-Ku, Ko, Hang-Ju, Chen, Yefan, Hanada, Takashi, Yao, Takafumi (2000) Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3. Applied Surface Science, 159. 441-448 doi:10.1016/s0169-4332(00)00053-2
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

See Also

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Hong, Soon-Ku, Ko, Hang-Ju, Chen, Yefan, Hanada, Takashi, Takafumi Yao, (2000) Evolution of initial layers of plasma-assisted MBE grown ZnO on (0001)GaN/sapphire. Journal of Crystal Growth, 214. 81-86 doi:10.1016/s0022-0248(00)00070-1
Hong, Soon-Ku, Hanada, Takashi, Ko, Hang-Ju, Chen, Yefan, Yao, Takafumi, Imai, Daisuke, Araki, Kiyoaki, Shinohara, Makoto (2000) Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates. Applied Physics Letters, 77 (22). 3571-3573 doi:10.1063/1.1329865
Hong, Soon-Ku, Hanada, Takashi, Ko, Hang-Ju, Chen, Yefan, Yao, Takafumi, Imai, Daisuke, Araki, Kiyoaki, Shinohara, Makoto, Saitoh, Koh, Terauchi, Masami (2002) Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN. Physical Review B, 65 (11) doi:10.1103/physrevb.65.115331
Ju Ko, Hang, Chen, Yefan, Ku Hong, Soon, Yao, Takafumi (2000) MBE growth of high-quality ZnO films on epi-GaN. Journal of Crystal Growth, 209 (4). 816-821 doi:10.1016/s0022-0248(99)00726-5
Hong, Soon-Ku, Hanada, Takashi, Chen, Yefen, Ko, Hang-Ju, Yao, Takafumi, Imai, Daisuke, Araki, Kiyoaki, Shinohara, Makoto (2002) Control of polarity of heteroepitaxial ZnO films by interface engineering. Applied Surface Science, 190. 491-497 doi:10.1016/s0169-4332(01)00924-2
Hong, Soon-Ku, Hanada, Takashi, Makino, Hisao, Chen, Yefan, Ko, Hang-Ju, Yao, Takafumi, Tanaka, Akinori, Sasaki, Hiroyuki, Sato, Shigeru (2001) Band alignment at a ZnO/GaN (0001) heterointerface. Applied Physics Letters, 78 (21). 3349-3351 doi:10.1063/1.1372339
Hong, Soon-Ku, Ko, Hang-Ju, Chen, Yefan, Yao, Takafumi (2000) Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometry. Journal of Crystal Growth, 209 (2). 537-541 doi:10.1016/s0022-0248(99)00615-6
Chen, Yefan, Hong, Soon-ku, Ko, Hang-ju, Nakajima, Masa, Yao, Takafumi, Segawa, Yusaburo (2000) Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates. Applied Physics Letters, 76 (2). 245-247 doi:10.1063/1.125716
Ko, Hang-Ju, Yao, Takafumi, Chen, Yefan, Hong, Soon-Ku (2002) Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy. Journal of Applied Physics, 92 (8). 4354-4360 doi:10.1063/1.1509103
Chen, Yefan, Ko, Hang-Ju, Hong, Soon-Ku, Yao, Takafumi, Segawa, Yusaburo (2002) Morphology evolution of ZnO(000 1̄) surface during plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 80 (8). 1358-1360 doi:10.1063/1.1454229
Chen, Yefan, Ko, Hang-Ju, Hong, Soon-Ku, Yao, Takafumi (2000) Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer. Applied Physics Letters, 76 (5). 559-561 doi:10.1063/1.125817
 
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