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Sawada, T, Ito, Y, Imai, K, Suzuki, K, Tomozawa, H, Sakai, S (2000) Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing. Applied Surface Science, 159. 449-455 doi:10.1016/s0169-4332(00)00060-x

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing
JournalApplied Surface Science
AuthorsSawada, TAuthor
Ito, YAuthor
Imai, KAuthor
Suzuki, KAuthor
Tomozawa, HAuthor
Sakai, SAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00060-xSearch in ResearchGate
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Mindat Ref. ID9901900Long-form Identifiermindat:1:5:9901900:6
GUID0
Full ReferenceSawada, T, Ito, Y, Imai, K, Suzuki, K, Tomozawa, H, Sakai, S (2000) Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing. Applied Surface Science, 159. 449-455 doi:10.1016/s0169-4332(00)00060-x
Plain TextSawada, T, Ito, Y, Imai, K, Suzuki, K, Tomozawa, H, Sakai, S (2000) Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing. Applied Surface Science, 159. 449-455 doi:10.1016/s0169-4332(00)00060-x
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Sawada, T, Izumi, Y, Kimura, N, Suzuki, K, Imai, K, Kim, S.-W, Suzuki, T (2003) Properties of GaN and AlGaN Schottky contacts revealed from I–V–T and C–V–T measurements. Applied Surface Science, 216. 192-197 doi:10.1016/s0169-4332(03)00440-9
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