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Shiozawa, Tatsuo, Yoshida, Toshiyuki, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces. Applied Surface Science, 159. 98-103 doi:10.1016/s0169-4332(00)00068-4

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Reference TypeJournal (article/letter/editorial)
TitleCorrelation between interface state properties and electron transport at ultrathin insulator/Si interfaces
JournalApplied Surface Science
AuthorsShiozawa, TatsuoAuthor
Yoshida, ToshiyukiAuthor
Hashizume, TamotsuAuthor
Hasegawa, HidekiAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00068-4Search in ResearchGate
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Mindat Ref. ID9901908Long-form Identifiermindat:1:5:9901908:8
GUID0
Full ReferenceShiozawa, Tatsuo, Yoshida, Toshiyuki, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces. Applied Surface Science, 159. 98-103 doi:10.1016/s0169-4332(00)00068-4
Plain TextShiozawa, Tatsuo, Yoshida, Toshiyuki, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces. Applied Surface Science, 159. 98-103 doi:10.1016/s0169-4332(00)00068-4
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Takahashi, Hiroshi, Hashizume, Tamotsu, Hasegawa, Hideki (1998) Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer. Applied Surface Science, 123. 615-618 doi:10.1016/s0169-4332(97)00577-1
Anantathanasarn, Sanguan, Ootomo, Shin-ya, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Surface passivation of GaAs by ultra-thin cubic GaN layer. Applied Surface Science, 159. 456-461 doi:10.1016/s0169-4332(00)00077-5
Negoro, Noboru, Fujikura, Hajime, Hasegawa, Hideki (2000) Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science, 159. 292-300 doi:10.1016/s0169-4332(00)00054-4
Hashizume, Tamotsu, Ikeya, Kengo, Mutoh, Morimichi, Hasegawa, Hideki (1998) Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation. Applied Surface Science, 123. 599-602 doi:10.1016/s0169-4332(97)00576-x
Inagaki, Takanori, Hashizume, Tamotsu, Hasegawa, Hideki (2003) Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure. Applied Surface Science, 216. 519-525 doi:10.1016/s0169-4332(03)00482-3
Oyama, Susumu, Hashizume, Tamotsu, Hasegawa, Hideki (2002) Mechanism of current leakage through metal/n-GaN interfaces. Applied Surface Science, 190. 322-325 doi:10.1016/s0169-4332(01)00902-3
Yoshida, Toshiyuki, Hashizume, Tamotsu, Hasegawa, Hideki (1997) Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods. Japanese Journal of Applied Physics, 36. 1453-1459 doi:10.1143/jjap.36.1453
Jin, Zhi, Hashizume, Tamotsu, Hasegawa, Hideki (2002) Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride. Applied Surface Science, 190. 361-365 doi:10.1016/s0169-4332(01)00853-4
Hasunuma, Ryu, Ando, Atsushi, Miki, Kazushi, Nishioka, Yasushiro (2000) Analysis on interface states of ultrathin-SiO2/Si(111). Applied Surface Science, 159. 83-88 doi:10.1016/s0169-4332(00)00045-3
Kudoh, Takashi, Okada, Hiroshi, Hashizume, Tamotsu, Hasegawa, Hideki (1997) Controlled formation of metal-semiconductor interface to 2DEG layer by in-situ electrochemical process and its application to in-plane gated electron waveguide devices. Applied Surface Science, 117. 342-346 doi:10.1016/s0169-4332(97)80105-5
Hashizume, Tamotsu, Ishikawa, Yasuhiko, Yoshida, Toshiyuki, Hasegawa, Hideki (1998) In-SituContactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2Γ—4) GaAs Surfaces. Japanese Journal of Applied Physics, 37. 1626-1630 doi:10.1143/jjap.37.1626
 
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