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Nitta, Shugo, Kariya, Michihiko, Kashima, Takayuki, Yamaguchi, Shigeo, Amano, Hiroshi, Akasaki, Isamu (2000) Mass transport and the reduction of threading dislocation in GaN. Applied Surface Science, 159. 421-426 doi:10.1016/s0169-4332(00)00089-1

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Reference TypeJournal (article/letter/editorial)
TitleMass transport and the reduction of threading dislocation in GaN
JournalApplied Surface Science
AuthorsNitta, ShugoAuthor
Kariya, MichihikoAuthor
Kashima, TakayukiAuthor
Yamaguchi, ShigeoAuthor
Amano, HiroshiAuthor
Akasaki, IsamuAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00089-1Search in ResearchGate
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Mindat Ref. ID9901929Long-form Identifiermindat:1:5:9901929:1
GUID0
Full ReferenceNitta, Shugo, Kariya, Michihiko, Kashima, Takayuki, Yamaguchi, Shigeo, Amano, Hiroshi, Akasaki, Isamu (2000) Mass transport and the reduction of threading dislocation in GaN. Applied Surface Science, 159. 421-426 doi:10.1016/s0169-4332(00)00089-1
Plain TextNitta, Shugo, Kariya, Michihiko, Kashima, Takayuki, Yamaguchi, Shigeo, Amano, Hiroshi, Akasaki, Isamu (2000) Mass transport and the reduction of threading dislocation in GaN. Applied Surface Science, 159. 421-426 doi:10.1016/s0169-4332(00)00089-1
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Amano, Hiroshi, Akasaki, Isamu (2000) Strain relief by In-doping and its effect on the surface and on the interface structures in (Al)GaN on sapphire grown by metalorganic vapor-phase epitaxy. Applied Surface Science, 159. 414-420 doi:10.1016/s0169-4332(00)00087-8
Kariya, Michihiko, Nitta, Shugo, Yamaguchi, Shigeo, Kashima, Takayuki, Kato, Hisaki, Amano, Hiroshi, Akasaki, Isamu (2000) Structural characterization of Al1−xInxN lattice-matched to GaN. Journal of Crystal Growth, 209 (2). 419-423 doi:10.1016/s0022-0248(99)00583-7
Yamaguchi, Shigeo, Kariya, Michihiko, Kashima, Takayuki, Nitta, Shugo, Kosaki, Masayoshi, Yukawa, Yohei, Amano, Hiroshi, Akasaki, Isamu (2001) Control of strain in GaN using an In doping-induced hardening effect. Physical Review B, 64 (3) doi:10.1103/physrevb.64.035318
Kariya, Michihiko, Nitta, Shugo, Yamaguchi, Shigeo, Amano, Hiroshi, Akasaki, Isamu (1999) Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l984
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Takeuchi, Tetsuya, Wetzel, Christian, Amano, Hiroshi, Akasaki, Isamu (2000) Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy. Applied Physics Letters, 76 (7). 876-878 doi:10.1063/1.125615
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Amano, Hiroshi, Akasaki, Isamu (2000) The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 39. 2385-2388 doi:10.1143/jjap.39.2385
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Amano, Hiroshi, Akasaki, Isamu (1999) Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 75 (26). 4106-4108 doi:10.1063/1.125551
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Takeuchi, Tetsuya, Wetzel, Christian, Amano, Hiroshi, Akasaki, Isamu (1999) Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy. Journal of Applied Physics, 85 (11). 7682-7688 doi:10.1063/1.370571
Yamaguchi, Shigeo, Kariya, Michihiko, Kosaki, Masayoshi, Yukawa, Yohei, Nitta, Shugo, Amano, Hiroshi, Akasaki, Isamu (2001) Control of strain in GaN by a combination of H2 and N2 carrier gases. Journal of Applied Physics, 89 (12). 7820-7824 doi:10.1063/1.1371278
Kariya, Michihiko, Nitta, Shugo, Kosaki, Masayoshi, Yukawa, Yohei, Yamaguchi, Shigeo, Amano, Hiroshi, Akasaki, Isamu (2000) Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l143
Kariya, Michihiko, Nitta, Shugo, Yamaguchi, Shigeo, Kato, Hisaki, Takeuchi, Tetsuya, Wetzel, Christian, Amano, Hiroshi, Akasaki, Isamu (1998) Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l697
 
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