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Barreau, N, Marsillac, S, Bernède, J.C, Barreau, A (2000) Investigation of β-In2S3 growth on different transparent conductive oxides. Applied Surface Science, 161. 20-26 doi:10.1016/s0169-4332(00)00040-4

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of β-In2S3 growth on different transparent conductive oxides
JournalApplied Surface Science
AuthorsBarreau, NAuthor
Marsillac, SAuthor
Bernède, J.CAuthor
Barreau, AAuthor
Year2000 (July)Volume161
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00040-4Search in ResearchGate
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Mindat Ref. ID9901990Long-form Identifiermindat:1:5:9901990:9
GUID0
Full ReferenceBarreau, N, Marsillac, S, Bernède, J.C, Barreau, A (2000) Investigation of β-In2S3 growth on different transparent conductive oxides. Applied Surface Science, 161. 20-26 doi:10.1016/s0169-4332(00)00040-4
Plain TextBarreau, N, Marsillac, S, Bernède, J.C, Barreau, A (2000) Investigation of β-In2S3 growth on different transparent conductive oxides. Applied Surface Science, 161. 20-26 doi:10.1016/s0169-4332(00)00040-4
In(n.d.) Applied Surface Science Vol. 161. Elsevier BV

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Bernède, J.C, Barreau, N, Marsillac, S, Assmann, L (2002) Band alignment at β-In2S3/TCO interface. Applied Surface Science, 195. 222-228 doi:10.1016/s0169-4332(02)00551-2
Barreau, N., Bernède, J.C., Marsillac, S., Mokrani, A. (2002) Study of low temperature elaborated tailored optical band gap β-In2S3−3xO3x thin films. Journal of Crystal Growth, 235 (1). 439-449 doi:10.1016/s0022-0248(01)02040-1
Barreau, N., Bernède, J.C., Marsillac, S. (2002) Study of the new β-In2S3 containing Na thin films. Part II: Optical and electrical characterization of thin films. Journal of Crystal Growth, 241 (1). 51-56 doi:10.1016/s0022-0248(02)01243-5
Barreau, N., Bernède, J.C., Deudon, C., Brohan, L., Marsillac, S. (2002) Study of the new β-In2S3 containing Na thin films Part I: Synthesis and structural characterization of the material. Journal of Crystal Growth, 241 (1). 4-14 doi:10.1016/s0022-0248(02)01242-3
Barreau, N., Marsillac, S., Bernède, J. C., Assmann, L. (2003) Evolution of the band structure of β-In2S3−3xO3x buffer layer with its oxygen content. Journal of Applied Physics, 93 (9). 5456-5459 doi:10.1063/1.1565823
El Maliki, H., Bernède, J.C., Marsillac, S., Pinel, J., Castel, X., Pouzet, J. (2003) Study of the influence of annealing on the properties of CBD-CdS thin films. Applied Surface Science, 205. 65-79 doi:10.1016/s0169-4332(02)01082-6
Baba Ali, E, Sorensen, G, Ouerfelli, J, Bernède, J.C, El Maliki, H (1999) Optimization of In2O3 transparent conductive films by Ge ion implantation. Applied Surface Science, 152. 1-9 doi:10.1016/s0169-4332(99)00312-8
Marsillac, S, Bernède, J.C, Emziane, M, Wery, J, Faulques, E, Le Ray, P (1999) Properties of photoconductive In2Se3 thin films, crystallized by post-deposition heat treatment in nitrogen atmosphere. Applied Surface Science, 151. 171-179 doi:10.1016/s0169-4332(99)00300-1
(2000) Index. Applied Surface Science, 161. 515-519 doi:10.1016/s0169-4332(00)00505-5
(2000) Index. Applied Surface Science, 161. 520-534 doi:10.1016/s0169-4332(00)00506-7
Bernède, J.C (2001) About the preferential sputtering of chalcogen from transition metal dichalcogenide compounds and the determination of compound stoichiometry from XPS peak positions. Applied Surface Science, 171. 15-20 doi:10.1016/s0169-4332(00)00535-3
 
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