Li, Changqing, Kondo, Keiichi, Makimura, Tetsuya, Murakami, Kouichi (2002) Fabrication of Er-doped Si nanocrystallites without thermal quenching of 1.5 μm photoluminescence. Applied Surface Science, 197. 607-609 doi:10.1016/s0169-4332(02)00407-5
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Fabrication of Er-doped Si nanocrystallites without thermal quenching of 1.5 μm photoluminescence | ||
Journal | Applied Surface Science | ||
Authors | Li, Changqing | Author | |
Kondo, Keiichi | Author | ||
Makimura, Tetsuya | Author | ||
Murakami, Kouichi | Author | ||
Year | 2002 (September) | Volume | 197 |
Publisher | Elsevier BV | ||
DOI | doi:10.1016/s0169-4332(02)00407-5Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 9904215 | Long-form Identifier | mindat:1:5:9904215:6 |
GUID | 0 | ||
Full Reference | Li, Changqing, Kondo, Keiichi, Makimura, Tetsuya, Murakami, Kouichi (2002) Fabrication of Er-doped Si nanocrystallites without thermal quenching of 1.5 μm photoluminescence. Applied Surface Science, 197. 607-609 doi:10.1016/s0169-4332(02)00407-5 | ||
Plain Text | Li, Changqing, Kondo, Keiichi, Makimura, Tetsuya, Murakami, Kouichi (2002) Fabrication of Er-doped Si nanocrystallites without thermal quenching of 1.5 μm photoluminescence. Applied Surface Science, 197. 607-609 doi:10.1016/s0169-4332(02)00407-5 | ||
In | (n.d.) Applied Surface Science Vol. 197. Elsevier BV |
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