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Knizikevičius, R. (2002) Real dimensional simulation of silicon etching in CF4 + O2 plasma. Applied Surface Science, 201. 96-108 doi:10.1016/s0169-4332(02)00558-5

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Reference TypeJournal (article/letter/editorial)
TitleReal dimensional simulation of silicon etching in CF4 + O2 plasma
JournalApplied Surface Science
AuthorsKnizikevičius, R.Author
Year2002 (November)Volume201
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(02)00558-5Search in ResearchGate
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Mindat Ref. ID9904360Long-form Identifiermindat:1:5:9904360:5
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Full ReferenceKnizikevičius, R. (2002) Real dimensional simulation of silicon etching in CF4 + O2 plasma. Applied Surface Science, 201. 96-108 doi:10.1016/s0169-4332(02)00558-5
Plain TextKnizikevičius, R. (2002) Real dimensional simulation of silicon etching in CF4 + O2 plasma. Applied Surface Science, 201. 96-108 doi:10.1016/s0169-4332(02)00558-5
In(n.d.) Applied Surface Science Vol. 201. Elsevier BV

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Knizikevičius, R (2004) Real dimensional simulation of SiO2 etching in CF4 + H2 plasma. Applied Surface Science, 222. 275-285 doi:10.1016/j.apsusc.2003.08.077
Grigonis, A., Knizikevičius, R., Rutkūnien≐, Ž., Puc≐ta, M. (2002) Kinetics of composition of polymeric layer during silicon etching in CF2Cl2 plasma. Applied Surface Science, 199. 270-277 doi:10.1016/s0169-4332(02)00867-x
Knizikevičius, R (2003) Simulation of the loading effect. Applied Surface Science, 217. 275-280 doi:10.1016/s0169-4332(03)00556-7
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Graves, David B, Humbird, David (2002) Surface chemistry associated with plasma etching processes. Applied Surface Science, 192. 72-87 doi:10.1016/s0169-4332(02)00021-1
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Mukhopadhyay, S.M, Joshi, P, Datta, S, Macdaniel, J (2002) Plasma assisted surface coating of porous solids. Applied Surface Science, 201. 219-226 doi:10.1016/s0169-4332(02)00939-x
 
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