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Nohira, H., Shiraishi, T., Nakamura, T., Takahashi, K., Takeda, M., Ohmi, S., Iwai, H., Hattori, T. (2003) Chemical and electronic structures of Lu2O3/Si interfacial transition layer. Applied Surface Science, 216. 234-238 doi:10.1016/s0169-4332(03)00425-2

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Reference TypeJournal (article/letter/editorial)
TitleChemical and electronic structures of Lu2O3/Si interfacial transition layer
JournalApplied Surface Science
AuthorsNohira, H.Author
Shiraishi, T.Author
Nakamura, T.Author
Takahashi, K.Author
Takeda, M.Author
Ohmi, S.Author
Iwai, H.Author
Hattori, T.Author
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00425-2Search in ResearchGate
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Mindat Ref. ID9905281Long-form Identifiermindat:1:5:9905281:6
GUID0
Full ReferenceNohira, H., Shiraishi, T., Nakamura, T., Takahashi, K., Takeda, M., Ohmi, S., Iwai, H., Hattori, T. (2003) Chemical and electronic structures of Lu2O3/Si interfacial transition layer. Applied Surface Science, 216. 234-238 doi:10.1016/s0169-4332(03)00425-2
Plain TextNohira, H., Shiraishi, T., Nakamura, T., Takahashi, K., Takeda, M., Ohmi, S., Iwai, H., Hattori, T. (2003) Chemical and electronic structures of Lu2O3/Si interfacial transition layer. Applied Surface Science, 216. 234-238 doi:10.1016/s0169-4332(03)00425-2
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Nohira, H, Shiraishi, T, Takahashi, K, Hattori, T, Kashiwagi, I, Ohshima, C, Ohmi, S, Iwai, H, Joumori, S, Nakajima, K, Suzuki, M, Kimura, K (2004) Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer. Applied Surface Science, 234. 493-496 doi:10.1016/j.apsusc.2004.05.032
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