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Lim, W.T., Baek, I.K., Lee, J.W., Lee, E.S., Jeon, M.H., Cho, G.S., Pearton, S.J. (2004) BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor. Applied Surface Science, 222. 74-81 doi:10.1016/j.apsusc.2003.08.009

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Reference TypeJournal (article/letter/editorial)
TitleBCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor
JournalApplied Surface Science
AuthorsLim, W.T.Author
Baek, I.K.Author
Lee, J.W.Author
Lee, E.S.Author
Jeon, M.H.Author
Cho, G.S.Author
Pearton, S.J.Author
Year2004 (January)Volume222
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2003.08.009Search in ResearchGate
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Mindat Ref. ID9905627Long-form Identifiermindat:1:5:9905627:4
GUID0
Full ReferenceLim, W.T., Baek, I.K., Lee, J.W., Lee, E.S., Jeon, M.H., Cho, G.S., Pearton, S.J. (2004) BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor. Applied Surface Science, 222. 74-81 doi:10.1016/j.apsusc.2003.08.009
Plain TextLim, W.T., Baek, I.K., Lee, J.W., Lee, E.S., Jeon, M.H., Cho, G.S., Pearton, S.J. (2004) BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor. Applied Surface Science, 222. 74-81 doi:10.1016/j.apsusc.2003.08.009
In(n.d.) Applied Surface Science Vol. 222. Elsevier BV

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Lee, J.W, Lim, Y.T, Baek, I.K, Yoo, S.Y, Cho, G.S, Jeoin, M.H, Leem, J.Y, Pearton, S.J (2004) Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne. Applied Surface Science, 233. 402-410 doi:10.1016/j.apsusc.2004.04.008
Maeda, T, Lee, J.W, Shul, R.J, Han, J, Hong, J, Lambers, E.S, Pearton, S.J, Abernathy, C.R, Hobson, W.S (1999) Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries. Applied Surface Science, 143. 183-190 doi:10.1016/s0169-4332(98)00593-5
Maeda, T, Lee, J.W, Shul, R.J, Han, J, Hong, J, Lambers, E.S, Pearton, S.J, Abernathy, C.R, Hobson, W.S (1999) Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries. Applied Surface Science, 143. 174-182 doi:10.1016/s0169-4332(98)00594-7
Lim, W. T., Baek, I. K., Lee, J. W., Jeon, M. H., Park, W. W., Cho, G. S., Pearton, S. J. (2004) Planar Inductively Coupled BCl[sub 3] Plasma Etching of III-V Semiconductors. Journal of the Electrochemical Society, 151. doi:10.1149/1.1690292
Lim, W. T., Baek, I. G., Jung, P. G., Lee, J. W., Cho, G. S., Lee, J. I., Cho, K. S., Pearton, S. J. (2004) Investigation of GaAs Dry Etching in a Planar Inductively Coupled BCl[sub 3] Plasma. Journal of the Electrochemical Society, 151. doi:10.1149/1.1643741
Hays, D.C, Cho, H, Lee, J.W, Devre, M.W, Reelfs, B.H, Johnson, D, Sasserath, J.N, Meyer, L.C, Toussaint, E, Ren, F, Abernathy, C.R, Pearton, S.J (2000) High selectivity Inductively Coupled Plasma etching of GaAs over InGaP. Applied Surface Science, 156. 76-84 doi:10.1016/s0169-4332(99)00363-3
Lim, Wantae, Voss, Lars, Khanna, Rohit, Gila, B.P., Norton, D.P., Pearton, S.J., Ren, F. (2006) Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO. Applied Surface Science, 253. 1269-1273 doi:10.1016/j.apsusc.2006.01.081
Lim, W.T., Stafford, L., Song, Ju-Il, Park, Jae-Soung, Heo, Y.W., Lee, Joon-Hyung, Kim, Jeong-Joo, Pearton, S.J. (2007) Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries. Applied Surface Science, 253. 3773-3778 doi:10.1016/j.apsusc.2006.07.094
Lim, W.T., Sadik, P.W., Norton, D.P., Pearton, S.J., Ren, F. (2008) Dry etching of CuCrO2 thin films. Applied Surface Science, 254. 2359-2363 doi:10.1016/j.apsusc.2007.09.034
Lim, W.T., Stafford, L., Song, Ju-Il, Park, Jae-Soung, Heo, Y.W., Lee, Joon-Hyung, Kim, Jeong-Joo, Pearton, S.J. (2006) High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries. Applied Surface Science, 253. 2752-2757 doi:10.1016/j.apsusc.2006.05.052
Dultsev, F.N., Kesler, V.G. (2009) Etching and oxidation of InAs in planar inductively coupled plasma. Applied Surface Science, 256. 246-250 doi:10.1016/j.apsusc.2009.08.009
 
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