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Naghavi, N., Henriquez, R., Laptev, V., Lincot, D. (2004) Growth studies and characterisation of In2S3 thin films deposited by atomic layer deposition (ALD). Applied Surface Science, 222. 65-73 doi:10.1016/j.apsusc.2003.08.011

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Reference TypeJournal (article/letter/editorial)
TitleGrowth studies and characterisation of In2S3 thin films deposited by atomic layer deposition (ALD)
JournalApplied Surface Science
AuthorsNaghavi, N.Author
Henriquez, R.Author
Laptev, V.Author
Lincot, D.Author
Year2004 (January)Volume222
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2003.08.011Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9905629Long-form Identifiermindat:1:5:9905629:2
GUID0
Full ReferenceNaghavi, N., Henriquez, R., Laptev, V., Lincot, D. (2004) Growth studies and characterisation of In2S3 thin films deposited by atomic layer deposition (ALD). Applied Surface Science, 222. 65-73 doi:10.1016/j.apsusc.2003.08.011
Plain TextNaghavi, N., Henriquez, R., Laptev, V., Lincot, D. (2004) Growth studies and characterisation of In2S3 thin films deposited by atomic layer deposition (ALD). Applied Surface Science, 222. 65-73 doi:10.1016/j.apsusc.2003.08.011
In(n.d.) Applied Surface Science Vol. 222. Elsevier BV

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