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Kollonitsch, Z., Schimper, H.-J., Seidel, U., Willig, F., Hannappel, T. (2006) In situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE. Applied Surface Science, 252. 4033-4038 doi:10.1016/j.apsusc.2005.07.030

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Reference TypeJournal (article/letter/editorial)
TitleIn situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE
JournalApplied Surface Science
AuthorsKollonitsch, Z.Author
Schimper, H.-J.Author
Seidel, U.Author
Willig, F.Author
Hannappel, T.Author
Year2006 (April)Volume252
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2005.07.030Search in ResearchGate
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Mindat Ref. ID9908041Long-form Identifiermindat:1:5:9908041:1
GUID0
Full ReferenceKollonitsch, Z., Schimper, H.-J., Seidel, U., Willig, F., Hannappel, T. (2006) In situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE. Applied Surface Science, 252. 4033-4038 doi:10.1016/j.apsusc.2005.07.030
Plain TextKollonitsch, Z., Schimper, H.-J., Seidel, U., Willig, F., Hannappel, T. (2006) In situ monitoring and benchmarking in UHV of InP/GaAsSb heterointerface reconstructions prepared via MOVPE. Applied Surface Science, 252. 4033-4038 doi:10.1016/j.apsusc.2005.07.030
In(n.d.) Applied Surface Science Vol. 252. Elsevier BV

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Kollonitsch, Z., Schimper, H.-J., Seidel, U., Möller, K., Neumann, S., Tegude, F.-J., Willig, F., Hannappel, T. (2006) Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode. Journal of Crystal Growth, 287 (2). 536-540 doi:10.1016/j.jcrysgro.2005.10.027
Schimper, H.-J., Kollonitsch, Z., Möller, K., Seidel, U., Bloeck, U., Schwarzburg, K., Willig, F., Hannappel, T. (2006) Material studies regarding InP-based high-efficiency solar cells. Journal of Crystal Growth, 287 (2). 642-646 doi:10.1016/j.jcrysgro.2005.10.121
Kollonitsch, Z., Möller, K., Willig, F., Hannappel, T. (2004) Reconstructions of MOVPE-prepared group-V-rich GaAsSb(100) surfaces. Journal of Crystal Growth, 272 (1). 694-699 doi:10.1016/j.jcrysgro.2004.08.064
Kollonitsch, Z., Möller, K., Schimper, H.-J., Giesen, Ch., Heuken, M., Willig, F., Hannappel, T. (2004) In situ monitored MOVPE growth of undoped and p-doped GaSb(100). Journal of Crystal Growth, 261 (2). 289-293 doi:10.1016/j.jcrysgro.2003.11.019
Möller, K., Töben, L., Kollonitsch, Z., Giesen, Ch., Heuken, M., Willig, F., Hannappel, T. (2005) In-situ monitoring and analysis of GaSb(100) substrate deoxidation. Applied Surface Science, 242. 392-398 doi:10.1016/j.apsusc.2004.09.006
Seidel, U., Schimper, H.-J., Kollonitsch, Z., Möller, K., Schwarzburg, K., Hannappel, T. (2007) Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell. Journal of Crystal Growth, 298. 777-781 doi:10.1016/j.jcrysgro.2006.10.132
Möller, K., Kollonitsch, Z., Giesen, Ch., Heuken, M., Willig, F., Hannappel, T. (2003) Optical in situ monitoring of MOVPE GaSb(100) film growth. Journal of Crystal Growth, 248. 244-248 doi:10.1016/s0022-0248(02)01928-0
Seidel, U., Döscher, H., Lehmann, C., Pettenkofer, C., Hannappel, T. (2010) Photoemission spectroscopy at MOVPE-prepared InGaAs(100) surface reconstructions. Surface Science, 604 (21). 2012-2015 doi:10.1016/j.susc.2010.08.013
Seidel, U., Hannappel, T. (2008) MOVPE preparation of InGaAs(100) surface reconstructions employing transient in-situ RDS. Journal of Crystal Growth, 310 (7). 2334-2338 doi:10.1016/j.jcrysgro.2007.11.012
Seidel, U., Sağol, B.E., Pettenkofer, C., Hannappel, T. (2008) Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(100) (4×2)/c(8×2) surface. Applied Surface Science, 255. 722-724 doi:10.1016/j.apsusc.2008.07.017
Letzig, T., Schimper, H.-J., Hannappel, T., Willig, F. (2005) P−Hbonds in the surface unit cell of P-rich ordered InP(001) grown by metalorganic chemical vapor deposition. Physical Review B, 71 (3) doi:10.1103/physrevb.71.033308
 
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