Shokhovets, S., Gobsch, G., Lebedev, V., Ambacher, O. (2006) “Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties. Applied Surface Science, 253. 224-227 doi:10.1016/j.apsusc.2006.05.108

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Reference Type	Journal (article/letter/editorial)
Title	“Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties
Journal	Applied Surface Science
Authors	Shokhovets, S.		Author
	Gobsch, G.		Author
	Lebedev, V.		Author
	Ambacher, O.		Author
Year	2006 (October)	Volume	253
Publisher	Elsevier BV
DOI	doi:10.1016/j.apsusc.2006.05.108Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	9909315	Long-form Identifier	mindat:1:5:9909315:0
GUID	0
Full Reference	Shokhovets, S., Gobsch, G., Lebedev, V., Ambacher, O. (2006) “Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties. Applied Surface Science, 253. 224-227 doi:10.1016/j.apsusc.2006.05.108
Plain Text	Shokhovets, S., Gobsch, G., Lebedev, V., Ambacher, O. (2006) “Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties. Applied Surface Science, 253. 224-227 doi:10.1016/j.apsusc.2006.05.108
In	(n.d.) Applied Surface Science Vol. 253. Elsevier BV

	*Shokhovets, S., Gobsch, G., Ambacher, O. (2005) Momentum matrix element and conduction band nonparabolicity in wurtzite GaN. Applied Physics Letters, 86 (16). 161908pp. doi:10.1063/1.1906313*
	*Shokhovets, S., Gobsch, G., Ambacher, O. (2006) Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors. Physical Review B, 74 (15) doi:10.1103/physrevb.74.155209*
	Shokhovets, S., Goldhahn, R., Gobsch, G., Piekh, S., Lantier, R., Rizzi, A., Lebedev, V., Richter, W. (2003) Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry. Journal of Applied Physics, 94 (1). 307-312 doi:10.1063/1.1582369
	Shokhovets, S., Bärwolf, F., Gobsch, G., Runge, E., Köhler, K., Ambacher, O. (2014) Excitons and exciton-phonon coupling in the optical response of GaN. physica status solidi (c), 11 (2). 297-301 doi:10.1002/pssc.201300311
	Shokhovets, S., Köhler, K., Ambacher, O., Gobsch, G. (2009) Observation of Fermi-edge excitons and exciton-phonon complexes in the optical response of heavily dopedn-type wurtzite GaN. Physical Review B, 79 (4) doi:10.1103/physrevb.79.045201
	Shokhovets, S., Fuhrmann, D., Goldhahn, R., Gobsch, G., Ambacher, O., Hermann, M., Karrer, U., Eickhoff, M. (2003) Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity. Applied Physics Letters, 82 (11). 1712-1714 doi:10.1063/1.1561160
	Shokhovets, S., Ambacher, O., Gobsch, G. (2007) Conduction-band dispersion relation and electron effective mass in III-V and II-VI zinc-blende semiconductors. Physical Review B, 76 (12) doi:10.1103/physrevb.76.125203
	Shokhovets, S., Ambacher, O., Meyer, B. K., Gobsch, G. (2008) Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors. Physical Review B, 78 (3) doi:10.1103/physrevb.78.035207
	Shokhovets, S., Fuhrmann, D., Goldhahn, R., Gobsch, G., Ambacher, O., Hermann, M., Karrer, U. (2002) Study of Exciton Dead Layers in GaN Schottky Diodes with N and Ga-Face Polarity. physica status solidi (a), 194 (2). 480-484 doi:10.1002/1521-396x(200212)194:2<480::aid-pssa480>3.0.co;2-j
	Tonisch, K., Buchheim, C., Niebelschütz, F., Schober, A., Gobsch, G., Cimalla, V., Ambacher, O., Goldhahn, R. (2008) Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures. Journal of Applied Physics, 104 (8). 84516pp. doi:10.1063/1.3005885
	Shokhovets, S., Ambacher, O., Meyer, B. K., Gobsch, G. (2008) Publisher's Note: Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors [Phys. Rev. B78, 035207 (2008)]. Physical Review B, 78 (7) doi:10.1103/physrevb.78.079902

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Shokhovets, S., Gobsch, G., Lebedev, V., Ambacher, O. (2006) “Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties. Applied Surface Science, 253. 224-227 doi:10.1016/j.apsusc.2006.05.108

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