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Ji, S.Y., Wang, J.F., Lim, J.-W., Isshiki, M. (2006) Growth process of β-FeSi 2 epitaxial film on Si(1 1 1) by molecular beam epitaxy. Applied Surface Science, 253. 444-448 doi:10.1016/j.apsusc.2005.12.121

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Reference TypeJournal (article/letter/editorial)
TitleGrowth process of β-FeSi 2 epitaxial film on Si(1 1 1) by molecular beam epitaxy
JournalApplied Surface Science
AuthorsJi, S.Y.Author
Wang, J.F.Author
Lim, J.-W.Author
Isshiki, M.Author
Year2006 (November)Volume253
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2005.12.121Search in ResearchGate
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Mindat Ref. ID9910048Long-form Identifiermindat:1:5:9910048:7
GUID0
Full ReferenceJi, S.Y., Wang, J.F., Lim, J.-W., Isshiki, M. (2006) Growth process of β-FeSi 2 epitaxial film on Si(1 1 1) by molecular beam epitaxy. Applied Surface Science, 253. 444-448 doi:10.1016/j.apsusc.2005.12.121
Plain TextJi, S.Y., Wang, J.F., Lim, J.-W., Isshiki, M. (2006) Growth process of β-FeSi 2 epitaxial film on Si(1 1 1) by molecular beam epitaxy. Applied Surface Science, 253. 444-448 doi:10.1016/j.apsusc.2005.12.121
In(n.d.) Applied Surface Science Vol. 253. Elsevier BV

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