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Ee, Y.C., Chen, Z., Law, S.B., Xu, S., Yakovlev, N.L., Lai, M.Y. (2006) Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation. Applied Surface Science, 253. 530-534 doi:10.1016/j.apsusc.2005.12.152

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Reference TypeJournal (article/letter/editorial)
TitleCopper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation
JournalApplied Surface Science
AuthorsEe, Y.C.Author
Chen, Z.Author
Law, S.B.Author
Xu, S.Author
Yakovlev, N.L.Author
Lai, M.Y.Author
Year2006 (November)Volume253
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2005.12.152Search in ResearchGate
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Mindat Ref. ID9910057Long-form Identifiermindat:1:5:9910057:5
GUID0
Full ReferenceEe, Y.C., Chen, Z., Law, S.B., Xu, S., Yakovlev, N.L., Lai, M.Y. (2006) Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation. Applied Surface Science, 253. 530-534 doi:10.1016/j.apsusc.2005.12.152
Plain TextEe, Y.C., Chen, Z., Law, S.B., Xu, S., Yakovlev, N.L., Lai, M.Y. (2006) Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation. Applied Surface Science, 253. 530-534 doi:10.1016/j.apsusc.2005.12.152
In(n.d.) Applied Surface Science Vol. 253. Elsevier BV

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