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Ye, F., Xie, E.Q., Duan, H.G., Li, H., Pan, X.J. (2006) The influence of H 2 plasma treatment on the field emission of amorphous GaN film. Applied Surface Science, 253. 859-862 doi:10.1016/j.apsusc.2006.01.036

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Reference TypeJournal (article/letter/editorial)
TitleThe influence of H 2 plasma treatment on the field emission of amorphous GaN film
JournalApplied Surface Science
AuthorsYe, F.Author
Xie, E.Q.Author
Duan, H.G.Author
Li, H.Author
Pan, X.J.Author
Year2006 (November)Volume253
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2006.01.036Search in ResearchGate
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Mindat Ref. ID9910103Long-form Identifiermindat:1:5:9910103:3
GUID0
Full ReferenceYe, F., Xie, E.Q., Duan, H.G., Li, H., Pan, X.J. (2006) The influence of H 2 plasma treatment on the field emission of amorphous GaN film. Applied Surface Science, 253. 859-862 doi:10.1016/j.apsusc.2006.01.036
Plain TextYe, F., Xie, E.Q., Duan, H.G., Li, H., Pan, X.J. (2006) The influence of H 2 plasma treatment on the field emission of amorphous GaN film. Applied Surface Science, 253. 859-862 doi:10.1016/j.apsusc.2006.01.036
In(n.d.) Applied Surface Science Vol. 253. Elsevier BV

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