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Hsu, H.F., Chan, H.Y., Chen, T.H., Wu, H.Y., Cheng, S.L., Wu, F.B. (2011) Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni–P/Si(100) systems. Applied Surface Science, 257. 7422-7426 doi:10.1016/j.apsusc.2011.02.108

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni–P/Si(100) systems
JournalApplied Surface Science
AuthorsHsu, H.F.Author
Chan, H.Y.Author
Chen, T.H.Author
Wu, H.Y.Author
Cheng, S.L.Author
Wu, F.B.Author
Year2011 (June)Volume257
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2011.02.108Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9916170Long-form Identifiermindat:1:5:9916170:7
GUID0
Full ReferenceHsu, H.F., Chan, H.Y., Chen, T.H., Wu, H.Y., Cheng, S.L., Wu, F.B. (2011) Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni–P/Si(100) systems. Applied Surface Science, 257. 7422-7426 doi:10.1016/j.apsusc.2011.02.108
Plain TextHsu, H.F., Chan, H.Y., Chen, T.H., Wu, H.Y., Cheng, S.L., Wu, F.B. (2011) Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni–P/Si(100) systems. Applied Surface Science, 257. 7422-7426 doi:10.1016/j.apsusc.2011.02.108
In(n.d.) Applied Surface Science Vol. 257. Elsevier BV

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