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Song, Chao, Xu, Jun, Chen, Guran, Sun, Hongcheng, Liu, Yu, Li, Wei, Xu, Ling, Ma, Zhongyuan, Chen, Kunji (2010) High-conductive nanocrystalline silicon with phosphorous and boron doping. Applied Surface Science, 257. 1337-1341 doi:10.1016/j.apsusc.2010.08.065

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Reference TypeJournal (article/letter/editorial)
TitleHigh-conductive nanocrystalline silicon with phosphorous and boron doping
JournalApplied Surface Science
AuthorsSong, ChaoAuthor
Xu, JunAuthor
Chen, GuranAuthor
Sun, HongchengAuthor
Liu, YuAuthor
Li, WeiAuthor
Xu, LingAuthor
Ma, ZhongyuanAuthor
Chen, KunjiAuthor
Year2010 (December)Volume257
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2010.08.065Search in ResearchGate
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Mindat Ref. ID9916907Long-form Identifiermindat:1:5:9916907:3
GUID0
Full ReferenceSong, Chao, Xu, Jun, Chen, Guran, Sun, Hongcheng, Liu, Yu, Li, Wei, Xu, Ling, Ma, Zhongyuan, Chen, Kunji (2010) High-conductive nanocrystalline silicon with phosphorous and boron doping. Applied Surface Science, 257. 1337-1341 doi:10.1016/j.apsusc.2010.08.065
Plain TextSong, Chao, Xu, Jun, Chen, Guran, Sun, Hongcheng, Liu, Yu, Li, Wei, Xu, Ling, Ma, Zhongyuan, Chen, Kunji (2010) High-conductive nanocrystalline silicon with phosphorous and boron doping. Applied Surface Science, 257. 1337-1341 doi:10.1016/j.apsusc.2010.08.065
In(n.d.) Applied Surface Science Vol. 257. Elsevier BV

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