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Shet, Sudhakar, Yan, Yanfa, Ravindra, Nuggehalli, Turner, John, Al-Jassim, Mowafak (2013) Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique. Applied Surface Science, 270. 718-721 doi:10.1016/j.apsusc.2013.01.134

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Reference TypeJournal (article/letter/editorial)
TitlePhotoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique
JournalApplied Surface Science
AuthorsShet, SudhakarAuthor
Yan, YanfaAuthor
Ravindra, NuggehalliAuthor
Turner, JohnAuthor
Al-Jassim, MowafakAuthor
Year2013 (April)Volume270
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2013.01.134Search in ResearchGate
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Mindat Ref. ID9920242Long-form Identifiermindat:1:5:9920242:0
GUID0
Full ReferenceShet, Sudhakar, Yan, Yanfa, Ravindra, Nuggehalli, Turner, John, Al-Jassim, Mowafak (2013) Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique. Applied Surface Science, 270. 718-721 doi:10.1016/j.apsusc.2013.01.134
Plain TextShet, Sudhakar, Yan, Yanfa, Ravindra, Nuggehalli, Turner, John, Al-Jassim, Mowafak (2013) Photoelectrochemical behavior of mixed ZnO and GaN (ZnO:GaN) thin films prepared by sputtering technique. Applied Surface Science, 270. 718-721 doi:10.1016/j.apsusc.2013.01.134
In(n.d.) Applied Surface Science Vol. 270. Elsevier BV

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