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Chen, Yongsheng, Chen, Xiping, Hao, Xiuli, Lu, Jingxiao, Yang, Shi-e (2013) The study of the substrate temperature depended growth properties of microcrystalline silicon films deposited by VHF-PECVD method. Applied Surface Science, 270. 737-740 doi:10.1016/j.apsusc.2013.01.142

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Reference TypeJournal (article/letter/editorial)
TitleThe study of the substrate temperature depended growth properties of microcrystalline silicon films deposited by VHF-PECVD method
JournalApplied Surface Science
AuthorsChen, YongshengAuthor
Chen, XipingAuthor
Hao, XiuliAuthor
Lu, JingxiaoAuthor
Yang, Shi-eAuthor
Year2013 (April)Volume270
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2013.01.142Search in ResearchGate
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Mindat Ref. ID9920245Long-form Identifiermindat:1:5:9920245:7
GUID0
Full ReferenceChen, Yongsheng, Chen, Xiping, Hao, Xiuli, Lu, Jingxiao, Yang, Shi-e (2013) The study of the substrate temperature depended growth properties of microcrystalline silicon films deposited by VHF-PECVD method. Applied Surface Science, 270. 737-740 doi:10.1016/j.apsusc.2013.01.142
Plain TextChen, Yongsheng, Chen, Xiping, Hao, Xiuli, Lu, Jingxiao, Yang, Shi-e (2013) The study of the substrate temperature depended growth properties of microcrystalline silicon films deposited by VHF-PECVD method. Applied Surface Science, 270. 737-740 doi:10.1016/j.apsusc.2013.01.142
In(n.d.) Applied Surface Science Vol. 270. Elsevier BV

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