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Maeng, Wan Joo, Oh, Il-Kwon, Kim, Woo-Hee, Kim, Min-Kyu, Lee, Chang-Wan, Lansalot-Matras, Clement, Thompson, David, Chu, Schubert, Kim, Hyungjun (2014) Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate. Applied Surface Science, 321. 214-218 doi:10.1016/j.apsusc.2014.10.025

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Reference TypeJournal (article/letter/editorial)
TitleAtomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate
JournalApplied Surface Science
AuthorsMaeng, Wan JooAuthor
Oh, Il-KwonAuthor
Kim, Woo-HeeAuthor
Kim, Min-KyuAuthor
Lee, Chang-WanAuthor
Lansalot-Matras, ClementAuthor
Thompson, DavidAuthor
Chu, SchubertAuthor
Kim, HyungjunAuthor
Year2014 (December)Volume321
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2014.10.025Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9924246Long-form Identifiermindat:1:5:9924246:4
GUID0
Full ReferenceMaeng, Wan Joo, Oh, Il-Kwon, Kim, Woo-Hee, Kim, Min-Kyu, Lee, Chang-Wan, Lansalot-Matras, Clement, Thompson, David, Chu, Schubert, Kim, Hyungjun (2014) Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate. Applied Surface Science, 321. 214-218 doi:10.1016/j.apsusc.2014.10.025
Plain TextMaeng, Wan Joo, Oh, Il-Kwon, Kim, Woo-Hee, Kim, Min-Kyu, Lee, Chang-Wan, Lansalot-Matras, Clement, Thompson, David, Chu, Schubert, Kim, Hyungjun (2014) Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate. Applied Surface Science, 321. 214-218 doi:10.1016/j.apsusc.2014.10.025
In(n.d.) Applied Surface Science Vol. 321. Elsevier BV

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