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Liu, Bingbing, Qin, Fuwen, Wang, Dejun (2016) Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing. Applied Surface Science, 364. 769-774 doi:10.1016/j.apsusc.2015.12.226

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Reference TypeJournal (article/letter/editorial)
TitlePassivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing
JournalApplied Surface Science
AuthorsLiu, BingbingAuthor
Qin, FuwenAuthor
Wang, DejunAuthor
Year2016 (February)Volume364
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2015.12.226Search in ResearchGate
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Mindat Ref. ID9927600Long-form Identifiermindat:1:5:9927600:9
GUID0
Full ReferenceLiu, Bingbing, Qin, Fuwen, Wang, Dejun (2016) Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing. Applied Surface Science, 364. 769-774 doi:10.1016/j.apsusc.2015.12.226
Plain TextLiu, Bingbing, Qin, Fuwen, Wang, Dejun (2016) Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing. Applied Surface Science, 364. 769-774 doi:10.1016/j.apsusc.2015.12.226
In(n.d.) Applied Surface Science Vol. 364. Elsevier BV

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Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun (2013) Improvement of SiO2/4H-SiC interface properties by electron cyclotron resonance microwave nitrogen-hydrogen mixed plasma post-oxidation annealing. Applied Physics Letters, 103 (6). 62105pp. doi:10.1063/1.4818141
Liu, Bingbing, Qin, Fuwen, Wang, Dejun (2015) Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing. Applied Surface Science, 355. 59-63 doi:10.1016/j.apsusc.2015.07.100
Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun (2014) Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma. Applied Physics Letters, 104 (20). 202101pp. doi:10.1063/1.4878661
Zhu, Qiaozhi, Qin, Fuwen, Li, Wenbo, Wang, Dejun (2014) Electrical and physical properties of 4H-SiC MOS interface with electron cyclotron resonance microwave nitrogen plasma post-oxidation annealing. Physica B: Condensed Matter, 432. 89-95 doi:10.1016/j.physb.2013.09.043
Yang, Chao, Zhang, Fanglong, Yin, Zhipeng, Su, Yan, Qin, Fuwen, Wang, Dejun (2019) Interface properties and bias temperature instability with ternary H–Cl–N mixed plasma post-oxidation annealing in 4H–SiC MOS capacitors. Applied Surface Science, 488. 293-302 doi:10.1016/j.apsusc.2019.05.241
Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun (2014) Publisher's Note: “Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma” [Appl. Phys. Lett. 104, 202101 (2014)]. Applied Physics Letters, 104 (26). 269902pp. doi:10.1063/1.4886975
Yang, Chao, Yin, Zhipeng, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun (2020) Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors. Applied Surface Science, 513. 145837pp. doi:10.1016/j.apsusc.2020.145837
Zhang, Qian, You, Nannan, Liu, Peng, Wang, Jiayi, Xu, Yang, Wang, Shengkai (2023) Study of defects distribution in SiO2/SiC with plasma oxidation and post oxidation annealing. Applied Surface Science, 610. 155500 doi:10.1016/j.apsusc.2022.155500
Wei, Shengsheng, Yin, Zhipeng, Bai, Jiao, Xie, Weiwei, Qin, Fuwen, Su, Yan, Wang, Dejun (2023) The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations. Applied Surface Science, 614. 156161 doi:10.1016/j.apsusc.2022.156161
Yin, Zhipeng, Yang, Chao, Zhang, Fanglong, Su, Yan, Qin, Fuwen, Wang, Dejun (2020) Low-temperature re-oxidation of near-interface defects and voltage stability in SiC MOS capacitors. Applied Surface Science, 531. 147312pp. doi:10.1016/j.apsusc.2020.147312
Wei, Shengsheng, Yin, Zhipeng, Bai, Jiao, Xie, Weiwei, Qin, Fuwen, Su, Yan, Wang, Dejun (2022) The structural and electronic properties of Carbon-related point defects on 4H-SiC (0001) surface. Applied Surface Science, 582. 152461pp. doi:10.1016/j.apsusc.2022.152461
 
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