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Braza, V., Reyes, D.F., Gonzalo, A., Utrilla, A.D., Ulloa, J.M., Flores, S., Ben, T., González, D. (2018) Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing. Applied Surface Science, 459. 1-8 doi:10.1016/j.apsusc.2018.07.184

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Reference TypeJournal (article/letter/editorial)
TitleCompositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
JournalApplied Surface Science
AuthorsBraza, V.Author
Reyes, D.F.Author
Gonzalo, A.Author
Utrilla, A.D.Author
Ulloa, J.M.Author
Flores, S.Author
Ben, T.Author
González, D.Author
Year2018 (November)Volume459
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2018.07.184Search in ResearchGate
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Mindat Ref. ID9935557Long-form Identifiermindat:1:5:9935557:3
GUID0
Full ReferenceBraza, V., Reyes, D.F., Gonzalo, A., Utrilla, A.D., Ulloa, J.M., Flores, S., Ben, T., González, D. (2018) Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing. Applied Surface Science, 459. 1-8 doi:10.1016/j.apsusc.2018.07.184
Plain TextBraza, V., Reyes, D.F., Gonzalo, A., Utrilla, A.D., Ulloa, J.M., Flores, S., Ben, T., González, D. (2018) Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing. Applied Surface Science, 459. 1-8 doi:10.1016/j.apsusc.2018.07.184
In(n.d.) Applied Surface Science Vol. 459. Elsevier BV

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Reyes, D.F., Braza, V., Gonzalo, A., Utrilla, A.D., Ulloa, J.M., Ben, T., González, D. (2018) Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications. Applied Surface Science, 442. 664-672 doi:10.1016/j.apsusc.2018.02.113
Ruiz-Marín, N., Reyes, D.F., Braza, V., Gonzalo, A., Ben, T., Flores, S., Utrilla, A.D., Ulloa, J.M., González, D. (2019) Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices. Applied Surface Science, 475. 473-478 doi:10.1016/j.apsusc.2018.12.228
Braza, V., Ben, T., Flores, S., Reyes, D.F., Gallego-Carro, A., Stanojević, L., Gačević, Ž., Ruíz-Marín, N., Ulloa, J.M., González, D. (2022) Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices. Applied Surface Science, 604. 154596 doi:10.1016/j.apsusc.2022.154596
Ruiz-Marín, N., Reyes, D.F., Braza, V., Flores, S., Stanojević, L., Gonzalo, A., Utrilla, A.D., Ulloa, J.M., Ben, T., González, D. (2020) Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures. Journal of Alloys and Compounds, 832. 154914pp. doi:10.1016/j.jallcom.2020.154914
Ruiz-Marín, N., Reyes, D.F., Braza, V., Flores, S., Gonzalo, A., Ulloa, J.M., Ben, T., González, D. (2020) Formation mechanisms of agglomerations in high-density InAs/GaAs quantum dot multi-layer structures. Applied Surface Science, 508. 145218pp. doi:10.1016/j.apsusc.2019.145218
González, D., Flores, S., Ruiz-Marín, N., Reyes, D.F., Stanojević, L., Utrilla, A.D., Gonzalo, A., Gallego Carro, A., Ulloa, J.M., Ben, T. (2021) Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features. Applied Surface Science, 537. 148062pp. doi:10.1016/j.apsusc.2020.148062
Gonzalo, A., Utrilla, A. D., Reyes, D. F., Braza, V., Llorens, J. M., Fuertes Marrón, D., Alén, B., Ben, T., González, D., Guzman, A., Hierro, A., Ulloa, J. M. (2017) Strain-balanced type-II superlattices for efficient multi-junction solar cells. Scientific Reports, 7. doi:10.1038/s41598-017-04321-4
Flores, S., Braza, V., Reyes, D.F., Ben, T., Gallego Carro, A., Schwarz, M., Ulloa, J.M., Gonzalez, D. (2024) Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages. Applied Surface Science, 644. 158676 doi:10.1016/j.apsusc.2023.158676
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Utrilla, Antonio D., Grossi, Davide F., Reyes, Daniel F., Gonzalo, Alicia, Braza, Verónica, Ben, Teresa, González, David, Guzman, Alvaro, Hierro, Adrian, Koenraad, Paul M., Ulloa, Jose M. (2018) Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate. Applied Surface Science, 444. 260-266 doi:10.1016/j.apsusc.2018.03.098
 
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