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Chen, Lanli, Wang, Aiping, Xiong, Zhihua, Shi, Siqi, Gao, Yanfeng (2019) Effect of hole doping and strain modulations on electronic structure and magnetic properties in ZnO monolayer. Applied Surface Science, 467. 22-29 doi:10.1016/j.apsusc.2018.10.132

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Reference TypeJournal (article/letter/editorial)
TitleEffect of hole doping and strain modulations on electronic structure and magnetic properties in ZnO monolayer
JournalApplied Surface Science
AuthorsChen, LanliAuthor
Wang, AipingAuthor
Xiong, ZhihuaAuthor
Shi, SiqiAuthor
Gao, YanfengAuthor
Year2019 (February)Volume467
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2018.10.132Search in ResearchGate
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Mindat Ref. ID9936327Long-form Identifiermindat:1:5:9936327:1
GUID0
Full ReferenceChen, Lanli, Wang, Aiping, Xiong, Zhihua, Shi, Siqi, Gao, Yanfeng (2019) Effect of hole doping and strain modulations on electronic structure and magnetic properties in ZnO monolayer. Applied Surface Science, 467. 22-29 doi:10.1016/j.apsusc.2018.10.132
Plain TextChen, Lanli, Wang, Aiping, Xiong, Zhihua, Shi, Siqi, Gao, Yanfeng (2019) Effect of hole doping and strain modulations on electronic structure and magnetic properties in ZnO monolayer. Applied Surface Science, 467. 22-29 doi:10.1016/j.apsusc.2018.10.132
In(n.d.) Applied Surface Science Vol. 467. Elsevier BV

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