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Grinys, Tomas, Drunga, Tomas, Dobrovolskas, Darius, Dargis, Rytis, Clark, Andrew (2020) Wet etching mechanism of Er2O3 grown on Si by molecular beam epitaxy. Applied Surface Science, 505. 144452pp. doi:10.1016/j.apsusc.2019.144452

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Reference TypeJournal (article/letter/editorial)
TitleWet etching mechanism of Er2O3 grown on Si by molecular beam epitaxy
JournalApplied Surface Science
AuthorsGrinys, TomasAuthor
Drunga, TomasAuthor
Dobrovolskas, DariusAuthor
Dargis, RytisAuthor
Clark, AndrewAuthor
Year2020 (March)Volume505
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2019.144452Search in ResearchGate
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Mindat Ref. ID9940241Long-form Identifiermindat:1:5:9940241:9
GUID0
Full ReferenceGrinys, Tomas, Drunga, Tomas, Dobrovolskas, Darius, Dargis, Rytis, Clark, Andrew (2020) Wet etching mechanism of Er2O3 grown on Si by molecular beam epitaxy. Applied Surface Science, 505. 144452pp. doi:10.1016/j.apsusc.2019.144452
Plain TextGrinys, Tomas, Drunga, Tomas, Dobrovolskas, Darius, Dargis, Rytis, Clark, Andrew (2020) Wet etching mechanism of Er2O3 grown on Si by molecular beam epitaxy. Applied Surface Science, 505. 144452pp. doi:10.1016/j.apsusc.2019.144452
In(n.d.) Applied Surface Science Vol. 505. Elsevier BV

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