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Li, Fangfang, Yang, Baishun, Zhu, Yu, Han, Xiufeng, Yan, Yu (2020) Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction. Applied Surface Science, 505. 144648pp. doi:10.1016/j.apsusc.2019.144648

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Reference TypeJournal (article/letter/editorial)
TitleFour distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction
JournalApplied Surface Science
AuthorsLi, FangfangAuthor
Yang, BaishunAuthor
Zhu, YuAuthor
Han, XiufengAuthor
Yan, YuAuthor
Year2020 (March)Volume505
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2019.144648Search in ResearchGate
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Mindat Ref. ID9940356Long-form Identifiermindat:1:5:9940356:0
GUID0
Full ReferenceLi, Fangfang, Yang, Baishun, Zhu, Yu, Han, Xiufeng, Yan, Yu (2020) Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction. Applied Surface Science, 505. 144648pp. doi:10.1016/j.apsusc.2019.144648
Plain TextLi, Fangfang, Yang, Baishun, Zhu, Yu, Han, Xiufeng, Yan, Yu (2020) Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction. Applied Surface Science, 505. 144648pp. doi:10.1016/j.apsusc.2019.144648
In(n.d.) Applied Surface Science Vol. 505. Elsevier BV

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