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Paul, Febin, Nama Manjunatha, Krishna, Govindarajan, Sridhar, Paul, Shashi (2020) Single step ohmic contact for heavily doped n-type silicon. Applied Surface Science, 506. 144686pp. doi:10.1016/j.apsusc.2019.144686

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Reference TypeJournal (article/letter/editorial)
TitleSingle step ohmic contact for heavily doped n-type silicon
JournalApplied Surface Science
AuthorsPaul, FebinAuthor
Nama Manjunatha, KrishnaAuthor
Govindarajan, SridharAuthor
Paul, ShashiAuthor
Year2020 (March)Volume506
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2019.144686Search in ResearchGate
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Mindat Ref. ID9940404Long-form Identifiermindat:1:5:9940404:6
GUID0
Full ReferencePaul, Febin, Nama Manjunatha, Krishna, Govindarajan, Sridhar, Paul, Shashi (2020) Single step ohmic contact for heavily doped n-type silicon. Applied Surface Science, 506. 144686pp. doi:10.1016/j.apsusc.2019.144686
Plain TextPaul, Febin, Nama Manjunatha, Krishna, Govindarajan, Sridhar, Paul, Shashi (2020) Single step ohmic contact for heavily doped n-type silicon. Applied Surface Science, 506. 144686pp. doi:10.1016/j.apsusc.2019.144686
In(n.d.) Applied Surface Science Vol. 506. Elsevier BV

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