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May, C. A., Shah, J. S. (1969) Dislocation reactions and cavitation studies in melt-grown sapphire. Journal of Materials Science, 4. 179-187 doi:10.1007/bf00550660

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Reference TypeJournal (article/letter/editorial)
TitleDislocation reactions and cavitation studies in melt-grown sapphire
JournalJournal of Materials Science
AuthorsMay, C. A.Author
Shah, J. S.Author
Year1969 (February)Volume4
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00550660Search in ResearchGate
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Mindat Ref. ID9980978Long-form Identifiermindat:1:5:9980978:2
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Full ReferenceMay, C. A., Shah, J. S. (1969) Dislocation reactions and cavitation studies in melt-grown sapphire. Journal of Materials Science, 4. 179-187 doi:10.1007/bf00550660
Plain TextMay, C. A., Shah, J. S. (1969) Dislocation reactions and cavitation studies in melt-grown sapphire. Journal of Materials Science, 4. 179-187 doi:10.1007/bf00550660
In(n.d.) Journal of Materials Science Vol. 4. Springer Science and Business Media LLC

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Abrahams, M. S., Weisberg, L. R., Buiocchi, C. J., Blanc, J. (1969) Dislocation morphology in graded heterojunctions: GaAs1?xPx. Journal of Materials Science, 4. 223-235 doi:10.1007/bf00549922
May, C. A., Shah, J. S. (1970) Vapour-Liquid-Solid growth on sapphire whiskers. Philosophical Magazine, 21 (171). 559-570 doi:10.1080/14786437008238438
Pollock, J. T. A., Bailey, J. S. (1974) Fracture strength in tension of a-axis filamentary sapphire grown by EFG. Journal of Materials Science, 9. 510-512 doi:10.1007/bf00737858
Champion, J. A., Keene, B. J., Sillwood, J. M. (1969) Interfacial effects between molten aluminium and sapphire. Journal of Materials Science, 4. 1111-1114 doi:10.1007/bf00549852
Tsai, C. T., Gulluoglu, A. N., Hartley, C. S. (1993) A crystallographic methodology for modeling dislocation dynamics in GaAs crystals grown from melt. Journal of Applied Physics, 73 (4). 1650-1656 doi:10.1063/1.353199
Ikonnikova, G. M., Bichurina, S. A. (1967) Dislocation structure of kcl crystals grown with vibration of the melt. Soviet Physics Journal, 10. 94-95 doi:10.1007/bf00818235
Cho, S. I., Chang, K., Kwon, M. S. (2008) Growth temperature dependence of strain in a GaN epilayer, grown on a c-plane sapphire substrate. Journal of Materials Science, 43. 406-408 doi:10.1007/s10853-007-2196-3
McFarlane, S. H., Wang, C. C. (1972) Lang Topographic Studies of III‐V Heteroepitaxial Films Grown on Sapphire and Spinel. Journal of Applied Physics, 43 (4). 1724-1732 doi:10.1063/1.1661387
Remmington, J. C. (1969) Bonding studies of liquid metal at low velocity impact. Journal of Materials Science, 4. 704-712 doi:10.1007/bf00742427
Ota, Ken'ichi, Pezzotti, Giuseppe (1996) Dislocation damping in sapphire, Al2O3 polycrystal and Al2O3/SiC nanocomposite. Journal of Materials Science Letters, 15 (11) doi:10.1007/bf00241439
Crouch, R. K., Debnam, W. J., Fripp, A. L. (1978) Properties of GaN grown on sapphire substrates. Journal of Materials Science, 13. 2358-2364 doi:10.1007/bf00808049
 
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