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Su, Yan-Kuin, Wang, Jian-Hong, Hung, M. P. (1989) Preparation and characterization of in1?xGaxAsyP1?y epilayers by liquid-phase epitaxy. Journal of Materials Science, 24. 899-905 doi:10.1007/bf01148775

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Reference TypeJournal (article/letter/editorial)
TitlePreparation and characterization of in1?xGaxAsyP1?y epilayers by liquid-phase epitaxy
JournalJournal of Materials Science
AuthorsSu, Yan-KuinAuthor
Wang, Jian-HongAuthor
Hung, M. P.Author
Year1989 (March)Volume24
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf01148775Search in ResearchGate
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Mindat Ref. ID9989360Long-form Identifiermindat:1:5:9989360:2
GUID0
Full ReferenceSu, Yan-Kuin, Wang, Jian-Hong, Hung, M. P. (1989) Preparation and characterization of in1?xGaxAsyP1?y epilayers by liquid-phase epitaxy. Journal of Materials Science, 24. 899-905 doi:10.1007/bf01148775
Plain TextSu, Yan-Kuin, Wang, Jian-Hong, Hung, M. P. (1989) Preparation and characterization of in1?xGaxAsyP1?y epilayers by liquid-phase epitaxy. Journal of Materials Science, 24. 899-905 doi:10.1007/bf01148775
In(n.d.) Journal of Materials Science Vol. 24. Springer Science and Business Media LLC

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Su, Y. K., Juang, F. S. (1990) Growth and characterization of GaSb epilayers by liquid phase epitaxy. Journal of Materials Science, 25. 843-847 doi:10.1007/bf03372171
Germogenov, V. P., Ivleva, O. M., Ponomarev, S. V., Khludkova, L. S., �piktetova, L. E. (1992) Manganese doping of In1?xGaxAsyP1-y films in liquid-phase epitaxy. Soviet Physics Journal, 35. 20-26 doi:10.1007/bf01324978
Greene, P.D., Wheeler, S.A. (1987) Electroabsorptive In1-xGaxAsyP1-y superlattices grown by liquid phase epitaxy. Journal of Crystal Growth, 84 (2). 259-265 doi:10.1016/0022-0248(87)90140-0
Su, Y. K., Wu, M. C., Chang, C. Y. (1986) Surface analysis of In1−x Ga x As y P1−y epilayer growth by liquid-phase epitaxy. Journal of Materials Science Letters, 5 (1) 91-92 doi:10.1007/bf01671449
Su, Y K, Wei, C C, Lu, S C, Chang, C C (1986) Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy. Bulletin of Materials Science, 8. 29-38 doi:10.1007/bf02744094
Su, Yan-Kuin (1985) Liquid-phase epitaxial growth of ternary InAs x Sb1?x for small amounts of InAs. Journal of Materials Science Letters, 4 (12) 1513-1514 doi:10.1007/bf00721381
Bernussi, A. A., Carvalho, W., Furtado, M. T., Gobbi, A. L. (1999) Photoluminescence microscopy imaging of tensile strained In1−xGaxAsyP1−y/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 86 (1). 402-407 doi:10.1063/1.370700
Chu, S. N. G., Nakahara, S., Strege, K. E., Johnston, W. D. (1985) Surface layer spinodal decomposition in In1−xGaxAsyP1−yand In1−xGaxAs grown by hydride transport vapor‐phase epitaxy. Journal of Applied Physics, 57 (10). 4610-4615 doi:10.1063/1.335368
Ashokkumar, M., Maruthamuthu, P. (1989) Preparation and characterization of doped WO3 photocatalyst powders. Journal of Materials Science, 24. 2135-2139 doi:10.1007/bf02385433
Jiang, Gwo-Cherng (1996) Characterization of Praseodymium-doped InP Epilayers Grown by Liquid-Phase Epitaxy. Japanese Journal of Applied Physics, 35. 2020-2024 doi:10.1143/jjap.35.2020
Liu, Chun Hsing, Yokoyama, Meiso, Su, Yan Kuin (1996) Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate. Japanese Journal of Applied Physics, 35. 5416-5420 doi:10.1143/jjap.35.5416
 
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