Tawancy, H. M. (2012) Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure. Journal of Materials Science, 47. 93-99 doi:10.1007/s10853-011-5728-9
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure | ||
Journal | Journal of Materials Science | ||
Authors | Tawancy, H. M. | Author | |
Year | 2012 (January) | Volume | 47 |
Publisher | Springer Science and Business Media LLC | ||
DOI | doi:10.1007/s10853-011-5728-9Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 10010258 | Long-form Identifier | mindat:1:5:10010258:5 |
GUID | 0 | ||
Full Reference | Tawancy, H. M. (2012) Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure. Journal of Materials Science, 47. 93-99 doi:10.1007/s10853-011-5728-9 | ||
Plain Text | Tawancy, H. M. (2012) Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure. Journal of Materials Science, 47. 93-99 doi:10.1007/s10853-011-5728-9 | ||
In | (n.d.) Journal of Materials Science Vol. 47. Springer Science and Business Media LLC |
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