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Tawancy, H. M. (2012) Response to comments on “Enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Silicon p-i-n Diode with Nanostructure”. Journal of Materials Science, 47. 104-107 doi:10.1007/s10853-011-6028-0

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Reference TypeJournal (article/letter/editorial)
TitleResponse to comments on “Enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Silicon p-i-n Diode with Nanostructure”
JournalJournal of Materials Science
AuthorsTawancy, H. M.Author
Year2012 (January)Volume47
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s10853-011-6028-0Search in ResearchGate
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Mindat Ref. ID10010316Long-form Identifiermindat:1:5:10010316:2
GUID0
Full ReferenceTawancy, H. M. (2012) Response to comments on “Enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Silicon p-i-n Diode with Nanostructure”. Journal of Materials Science, 47. 104-107 doi:10.1007/s10853-011-6028-0
Plain TextTawancy, H. M. (2012) Response to comments on “Enhancing the Photovoltaic Effect in the Infrared Region by Germanium Quantum Dots Inserted in the Intrinsic Region of a Silicon p-i-n Diode with Nanostructure”. Journal of Materials Science, 47. 104-107 doi:10.1007/s10853-011-6028-0
In(n.d.) Journal of Materials Science Vol. 47. Springer Science and Business Media LLC

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Tawancy, H. M. (2012) Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure. Journal of Materials Science, 47. 93-99 doi:10.1007/s10853-011-5728-9
Bouchier, D., Aboelfotoh, O. (2012) Comments on the article: “Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure” by H. M. Tawancy (Journal of Materials Science DOI: 10.1007/s10853-011-5728-9). Journal of Materials Science, 47. 100-103 doi:10.1007/s10853-011-6031-5
Yahia, I. S., Fadel, M., Sakr, G. B., Shenouda, S. S., Yakuphanoglu, F. (2012) Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode. Journal of Materials Science, 47. 1719-1728 doi:10.1007/s10853-011-5951-4
Tawancy, H. M., Abbas, N. M. (2005) Stabilization of Laves phase by silicon in a heat-resistant steel casting and its effect on creep-rupture life. Journal of Materials Science, 40. 2085-2087 doi:10.1007/s10853-005-1241-3
Morales-Florez, V., Findling, N., Brunet, F. (2012) Changes on the nanostructure of cementitius calcium silicate hydrates (C–S–H) induced by aqueous carbonation. Journal of Materials Science, 47. 764-771 doi:10.1007/s10853-011-5852-6
Tawancy, H. M., UI-Hamid, A., Abbas, N. M., Aboelfotoh, M. O. (2008) Effect of platinum on the oxide-to-metal adhesion in thermal barrier coating systems. Journal of Materials Science, 43. 2978-2989 doi:10.1007/s10853-007-2130-8
Ha, J., Chae, S., Chou, K. W., Tyliszczak, T., Monteiro, P. J. M. (2012) Effect of polymers on the nanostructure and on the carbonation of calcium silicate hydrates: a scanning transmission X-ray microscopy study. Journal of Materials Science, 47. 976-989 doi:10.1007/s10853-011-5877-x
Staiger, Mark P. (2012) Guest Editor’s Editorial: Preface to the special section on Materials Science in New Zealand. Journal of Materials Science, 47. 1101-1102 doi:10.1007/s10853-011-6058-7
Senderikhin, I. M. (1967) Theory of the reverse branch of the static characteristic of a germanium diode in the prebreakdown region. Soviet Physics Journal, 10. 71-75 doi:10.1007/bf00838537
Hamdy, Abdel Salam, Doench, I., Möhwald, H. (2012) The effect of alkaline etching time on the anticorrosion performance of vanadia film formed on high strength AA2024 in chloride media. Journal of Materials Science, 47. 3784-3792 doi:10.1007/s10853-011-6232-y
Mohamed, S. H., Raaif, M., Abd El-Rahman, A. M. (2012) Physical properties of thermally evaporated silicon films nitrided at different rf plasma-processing time. Journal of Materials Science, 47. 2875-2881 doi:10.1007/s10853-011-6117-0
 
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