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ZHANG, W., LELOGEAIS, M., DUCARROIR, M. (1991) KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991246

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Reference TypeJournal (article/letter/editorial)
TitleKINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD
JournalLe Journal de Physique IV
AuthorsZHANG, W.Author
LELOGEAIS, M.Author
DUCARROIR, M.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991246Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10295536Long-form Identifiermindat:1:5:10295536:3
GUID0
Full ReferenceZHANG, W., LELOGEAIS, M., DUCARROIR, M. (1991) KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991246
Plain TextZHANG, W., LELOGEAIS, M., DUCARROIR, M. (1991) KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991246
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

See Also

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LELOGEAIS, M., DUCARROIR, M., BERJOAN, R. (1991) ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991272
DUCARROIR, M., ZHANG, W., BERJOAN, R. (1993) SiCN coatings prepared by PACVD from TMS-NH3-Ar system on steel. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993333
Thomas, L., Badie, J. M., Tomasella, E., Ducarroir, M., Berjoan, R. (2001) Low frequency PACVD of silicon-carbon alloys : Process study. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013103
PONS, M., SANCANDI, M., NOWAK, J. F. (1991) TRANSPORT PHENOMENA AND REACTOR DESIGN FOR CHROMIUM CARBIDE DEPOSITION. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991213
ALEXANDROV, S. E., KOVALGIN, A. Y. (1991) REMOTE PLASMA CHEMICAL VAPOUR DEPOSITION OF SILICON NITRIDE FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:19912100
GOULDING, M. R. (1991) THE SELECTIVE EPITAXIAL GROWTH OF SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991290
NADAL, M., TEYSSANDIER, F. (1991) CHEMICAL VAPOR INFILTRATION OF 3D FIBROUS CARBON PREFORMS BY ZIRCONIUM CARBIDE. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991285
KITTLER, M., LÄRZ, J., MORGENSTERN, G., SEIFERT, W. (1991) CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC. Le Journal de Physique IV, 1. doi:10.1051/jp4:1991626
ROMAN, Y. G., STINTON, D. P., BESMANN, T. M. (1991) DEVELOPMENT OF HIGH DENSITY FIBER REINFORCED SILICON CARBIDE FCVI COMPOSITES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991283
AGULLO, J. M., DUCARROIR, M., CLEMENDOT, F., LINA, A. (1993) Si-C films on alloys : characterization of ageing behavior in air. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993320
Zhang, W. G., Hüttinger, K. J. (2001) Chemical vapor deposition of silicon carbide at various temperatures and surface area/volume ratios. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001307
 
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