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LELOGEAIS, M., DUCARROIR, M., BERJOAN, R. (1991) ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991272

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Reference TypeJournal (article/letter/editorial)
TitleADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL
JournalLe Journal de Physique IV
AuthorsLELOGEAIS, M.Author
DUCARROIR, M.Author
BERJOAN, R.Author
Year1991 (September)Volume2
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1991272Search in ResearchGate
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Mindat Ref. ID10295562Long-form Identifiermindat:1:5:10295562:2
GUID0
Full ReferenceLELOGEAIS, M., DUCARROIR, M., BERJOAN, R. (1991) ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991272
Plain TextLELOGEAIS, M., DUCARROIR, M., BERJOAN, R. (1991) ADHERENCE AND PROPERTIES OF SILICON CARBIDE BASED FILMS ON STEEL. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991272
In(n.d.) Le Journal de Physique IV Vol. 2. EDP Sciences

See Also

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ZHANG, W., LELOGEAIS, M., DUCARROIR, M. (1991) KINETIC APPROACH OF THE DEPOSITION OF SILICON CARBIDE BASED FILMS OBTAINED BY PACVD. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991246
DUCARROIR, M., ZHANG, W., BERJOAN, R. (1993) SiCN coatings prepared by PACVD from TMS-NH3-Ar system on steel. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993333
Thomas, L., Badie, J. M., Tomasella, E., Ducarroir, M., Berjoan, R. (2001) Low frequency PACVD of silicon-carbon alloys : Process study. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013103
GOULDING, M. R. (1991) THE SELECTIVE EPITAXIAL GROWTH OF SILICON. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991290
Kleps, I., Angelescu, A. (1999) LPCVD amorphous silicon carbide films, properties and microelectronics applications. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998139
Berjoan, R., Perarnau, D., Caussat, B. (1999) XPS study of CVD silicon thin films deposited on various substrates from SiH4 gaseous precursor. Le Journal de Physique IV, 9. doi:10.1051/jp4:19998142
AGULLO, J. M., DUCARROIR, M., CLEMENDOT, F., LINA, A. (1993) Si-C films on alloys : characterization of ageing behavior in air. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993320
KIRCHER, R., FURUNO, M., MUROTA, J., ONO, S. (1991) LOW-TEMPERATURE EPITAXY AND IN-SITU DOPING OF SILICON FILMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991292
LUNDBERG, R., PEJRYD, L., LÖÖF, G. (1991) CHEMICAL VAPOUR INFILTRATION (CVI) OF SILICON CARBIDE FIBRE PREFORMS. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991260
Grady, D. E. (1994) Shock-wave strength properties of boron carbide and silicon carbide. Le Journal de Physique IV, 4. doi:10.1051/jp4:1994859
ROMAN, Y. G., STINTON, D. P., BESMANN, T. M. (1991) DEVELOPMENT OF HIGH DENSITY FIBER REINFORCED SILICON CARBIDE FCVI COMPOSITES. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991283
 
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