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LEE, C., IM, Y. J., LEE, J. G. (1993) Adhesion and leakage current characteristics of selective CVD tungsten films on the silicon substrate. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993360

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Reference TypeJournal (article/letter/editorial)
TitleAdhesion and leakage current characteristics of selective CVD tungsten films on the silicon substrate
JournalLe Journal de Physique IV
AuthorsLEE, C.Author
IM, Y. J.Author
LEE, J. G.Author
Year1993 (August)Volume3
PublisherEDP Sciences
DOIdoi:10.1051/jp4:1993360Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID10296070Long-form Identifiermindat:1:5:10296070:1
GUID0
Full ReferenceLEE, C., IM, Y. J., LEE, J. G. (1993) Adhesion and leakage current characteristics of selective CVD tungsten films on the silicon substrate. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993360
Plain TextLEE, C., IM, Y. J., LEE, J. G. (1993) Adhesion and leakage current characteristics of selective CVD tungsten films on the silicon substrate. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993360
In(n.d.) Le Journal de Physique IV Vol. 3. EDP Sciences

See Also

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Wood, G. C., Stringer, J. (1993) The adhesion of growing oxide scales to the substrate. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993904
COUDERC, J.-P. (1993) CVD process engineering : modelling aspects. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993301
SAKURABA, M., MUROTA, J., ONO, S. (1993) Silicon atomic layer growth using flash heating in CVD. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993362
CARLSSON, J.-O. (1993) Thermal and laser-activated CVD : a comparison. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993327
DESCHANVRES, J.-L., BOCHU, B., JOUBERT, J.-C. (1993) Deposition conditions for the growth of textured ZnO thin films by aerosol CVD process. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993367
CHURAEVA, M. N. (1993) Ellipsometric analysis for CVD thick films on weakly absorbing substrates. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993324
LEE, C. S., DUGGAN, B. J., SMALLMAN, R. E. (1993) Deformation banding and its influence on deformation textures formation. Le Journal de Physique IV, 3. doi:10.1051/jp4:19937323
van der Lee, A., Durand, J., Cot, D., Vázquez, L. (1999) Study of the growth mechanism of CVD silicon films on silica by X-ray reflectivity, atomic force microscopy and scanning electron microscopy. Le Journal de Physique IV, 9. doi:10.1051/jp4:1999819
ALLEN, K. W. (1993) Current theories of adhesion and their relevance to adhesive technology. Le Journal de Physique IV, 3. doi:10.1051/jp4:19937236
BLANQUET, E., GOKOGLU, S. A. (1993) Tractable chemical models for CVD of silicon and carbon. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993305
STUKE, M. (1993) Laser applications in CVD. Le Journal de Physique IV, 3. doi:10.1051/jp4:1993369
 
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