Reference Type | Journal (article/letter/editorial) |
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Title | Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method |
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Journal | Le Journal de Physique IV |
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Authors | Izumi, A. | Author |
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Sato, H. | Author |
Matsumura, H. | Author |
Year | 2001 (August) | Volume | 11 |
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Publisher | EDP Sciences |
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DOI | doi:10.1051/jp4:20013112Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 10302019 | Long-form Identifier | mindat:1:5:10302019:0 |
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GUID | 0 |
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Full Reference | Izumi, A., Sato, H., Matsumura, H. (2001) Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013112 |
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Plain Text | Izumi, A., Sato, H., Matsumura, H. (2001) Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013112 |
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In | (n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences |
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