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Norman, J. A.T. (2001) Advances in copper CVD for the semiconductor industry. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001363

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Reference TypeJournal (article/letter/editorial)
TitleAdvances in copper CVD for the semiconductor industry
JournalLe Journal de Physique IV
AuthorsNorman, J. A.T.Author
Year2001 (August)Volume11
PublisherEDP Sciences
DOIdoi:10.1051/jp4:2001363Search in ResearchGate
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Mindat Ref. ID10302110Long-form Identifiermindat:1:5:10302110:4
GUID0
Full ReferenceNorman, J. A.T. (2001) Advances in copper CVD for the semiconductor industry. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001363
Plain TextNorman, J. A.T. (2001) Advances in copper CVD for the semiconductor industry. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001363
In(n.d.) Le Journal de Physique IV Vol. 11. EDP Sciences

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Durand, J., Rouessac, V. (2001) CVD techniques for gas separation membranes synthesis - characterization - applications. Le Journal de Physique IV, 11. doi:10.1051/jp4:20013132
Harsta, A. (2001) Halide CVD of dielectric and ferroelectric oxides. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001328
NORMAN, J. A.T., MURATORE, B. A., DYER, P. N., ROBERTS, D. A., HOCHBERG, A. K. (1991) NEW OMCVD PRECURSORS FOR SELECTIVE COPPER METALLIZATION. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991233
Piglmayer, K., Boman, M., Lindstam, M., Chabicovsky, R. (2001) Photon assisted CVD. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001389
Deschanvres, J. L., Meffre, W. (2001) Erbium doped yttria thin films deposited by injection CVD. Le Journal de Physique IV, 11. doi:10.1051/jp4:20011153
Bernard, C. (2001) Thermodynamic, kinetic and mass transport calculations, as the basis for materials processing by CVD. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001301
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Kamlag, Y., Goossens, A., Colbeck, I., Schoonman, J. (2001) Formation of cubic SiC nanocrystals by laser-assisted CVD. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001358
Turgambaeva, A. E., Igumenov, I. K. (2001) Thermal conversions of some Ba, Sr, Ti oxide precursors for CVD. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001379
He, L., Hitchman, M. L., Shamlian, S. H., Alexandrov, S. E. (2001) Organic chemistry by CVD. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001333
Hofstätter, M., Atakan, B., Kohse-Höinghaus, K. (2001) CVD growth of silicon films at high rates. Le Journal de Physique IV, 11. doi:10.1051/jp4:2001337
 
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