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Wagner, G., Paufler, P., Rohde, G. (1989) Asymmetry in surface morphology and dislocation nucleation of In1−xGaxAs/001) InP single heteroepitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 189 (3-4) 269 doi:10.1524/zkri.1989.189.3-4.269

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Reference TypeJournal (article/letter/editorial)
TitleAsymmetry in surface morphology and dislocation nucleation of In1−xGaxAs/001) InP single heteroepitaxial layers
JournalZeitschrift für Kristallographie - Crystalline Materials
AuthorsWagner, G.Author
Paufler, P.Author
Rohde, G.Author
Year1989 (January 1)Volume189
Issue3-4
PublisherWalter de Gruyter GmbH
DOIdoi:10.1524/zkri.1989.189.3-4.269Search in ResearchGate
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Mindat Ref. ID111941Long-form Identifiermindat:1:5:111941:5
GUID0
Full ReferenceWagner, G., Paufler, P., Rohde, G. (1989) Asymmetry in surface morphology and dislocation nucleation of In1−xGaxAs/001) InP single heteroepitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 189 (3-4) 269 doi:10.1524/zkri.1989.189.3-4.269
Plain TextWagner, G., Paufler, P., Rohde, G. (1989) Asymmetry in surface morphology and dislocation nucleation of In1−xGaxAs/001) InP single heteroepitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 189 (3-4) 269 doi:10.1524/zkri.1989.189.3-4.269
In(1989, January) Zeitschrift für Kristallographie - Crystalline Materials Vol. 189 (3-4) Walter de Gruyter GmbH
Abstract/NotesAbstractThe surface morphology and the dislocation structure of MOCVD grown In

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Wagner, G., Paufler, P., Rohde, G. (1989) Asymmetry in surface morphology and dislocation nucleation of In1-xGaxAs/(001) InP single heteroepitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 189 (14) 269 doi:10.1524/zkri.1989.189.14.269
Wagner, G., Paufler, P. (1991) Microtwinning in stress-relaxed In1-xGaxAs/(001) InP hetero-epitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 195 (14) 17 doi:10.1524/zkri.1991.195.14.17
Wagner, G., Paufler, P. (1991) Microtwinning in stress-relaxed In1 –xGaxAs/(001) InP hetero-epitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 195 (1) 17-29 doi:10.1524/zkri.1991.195.1-2.17
Paufler, Peter, Wagner, Gerald (1990) Surface corrugations on strained In1-xGaxAs epitaxial layers due to multiplex slip. Zeitschrift für Kristallographie - Crystalline Materials, 191 (3-4) 265 doi:10.1524/zkri.1990.191.3-4.265
Paufler, Peter, Wagner, Gerald (1990) Surface corrugations on strained In1 -xGaxAs epitaxial layers due to multiplex slip. Zeitschrift für Kristallographie - Crystalline Materials, 191 (14) 265 doi:10.1524/zkri.1990.191.14.265
Wagner, G., Paufler, P. (1993) Nucleation of dislocations and twins within heteroepitaxial In1−xGaxAs layers grown on (001) InP under tensile stress conditions. physica status solidi (a), 138 (2). 389-402 doi:10.1002/pssa.2211380205
Schäfer, G. F. (1986) The crystal structures of Na2TiF6 and Na2SiF6. Zeitschrift für Kristallographie - Crystalline Materials, 175 (3-4) 269 doi:10.1524/zkri.1986.175.3-4.269
Ghosh, Sikha, Nigam, G. D. (1989) Effect of hypersymmetry and atomic heterogeneity on cumulative distribution function. Zeitschrift für Kristallographie - Crystalline Materials, 189 (3-4) 205 doi:10.1524/zkri.1989.189.3-4.205
Wolska, Emilia, Schwertmann, Udo (1989) Nonstoichiometric structures during dehydroxylation of goethite. Zeitschrift für Kristallographie - Crystalline Materials, 189 (3-4) 223 doi:10.1524/zkri.1989.189.3-4.223
Wagner, G., Gottschalch, V., Rhan, H., Paufler, P. (1989) Pseudomorphic growth and nucleation of misfit dislocations in the epitaxial system (001) InP/In1-xGaxAs. II. Critical thickness and dislocation motion. physica status solidi (a), 113 (1). 71-81 doi:10.1002/pssa.2211130109
Paufler, P. (1989) Festkörperphysik. Eine Einführung in die Grundlagen. Zeitschrift für Kristallographie - Crystalline Materials, 189 (1) 156-157 doi:10.1524/zkri.1989.189.1-2.156
 
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