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Paufler, Peter, Wagner, Gerald (1990) Surface corrugations on strained In1-xGaxAs epitaxial layers due to multiplex slip. Zeitschrift für Kristallographie - Crystalline Materials, 191 (3-4) 265 doi:10.1524/zkri.1990.191.3-4.265

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Reference TypeJournal (article/letter/editorial)
TitleSurface corrugations on strained In1-xGaxAs epitaxial layers due to multiplex slip
JournalZeitschrift für Kristallographie - Crystalline Materials
AuthorsPaufler, PeterAuthor
Wagner, GeraldAuthor
Year1990 (January 1)Volume191
Issue3-4
PublisherWalter de Gruyter GmbH
DOIdoi:10.1524/zkri.1990.191.3-4.265Search in ResearchGate
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Mindat Ref. ID112110Long-form Identifiermindat:1:5:112110:4
GUID0
Full ReferencePaufler, Peter, Wagner, Gerald (1990) Surface corrugations on strained In1-xGaxAs epitaxial layers due to multiplex slip. Zeitschrift für Kristallographie - Crystalline Materials, 191 (3-4) 265 doi:10.1524/zkri.1990.191.3-4.265
Plain TextPaufler, Peter, Wagner, Gerald (1990) Surface corrugations on strained In1-xGaxAs epitaxial layers due to multiplex slip. Zeitschrift für Kristallographie - Crystalline Materials, 191 (3-4) 265 doi:10.1524/zkri.1990.191.3-4.265
In(1990, January) Zeitschrift für Kristallographie - Crystalline Materials Vol. 191 (3-4) Walter de Gruyter GmbH
Abstract/NotesAbstractAn investigation of the surface profile of epitaxial In

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Paufler, Peter, Wagner, Gerald (1990) Surface corrugations on strained In1 -xGaxAs epitaxial layers due to multiplex slip. Zeitschrift für Kristallographie - Crystalline Materials, 191 (14) 265 doi:10.1524/zkri.1990.191.14.265
Wagner, G., Paufler, P. (1991) Microtwinning in stress-relaxed In1-xGaxAs/(001) InP hetero-epitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 195 (14) 17 doi:10.1524/zkri.1991.195.14.17
Wagner, G., Paufler, P. (1991) Microtwinning in stress-relaxed In1 –xGaxAs/(001) InP hetero-epitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 195 (1) 17-29 doi:10.1524/zkri.1991.195.1-2.17
Wagner, G., Paufler, P., Rohde, G. (1989) Asymmetry in surface morphology and dislocation nucleation of In1−xGaxAs/001) InP single heteroepitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 189 (3-4) 269 doi:10.1524/zkri.1989.189.3-4.269
Wagner, G., Paufler, P., Rohde, G. (1989) Asymmetry in surface morphology and dislocation nucleation of In1-xGaxAs/(001) InP single heteroepitaxial layers. Zeitschrift für Kristallographie - Crystalline Materials, 189 (14) 269 doi:10.1524/zkri.1989.189.14.269
Wondratschek, H. (1990) Perfect Groups. Zeitschrift für Kristallographie - Crystalline Materials, 191 (3-4) 287 doi:10.1524/zkri.1990.191.3-4.287a
Vojta, G. (1990) Far from Equilibrium Phase Transitions. Zeitschrift für Kristallographie - Crystalline Materials, 191 (3-4) 287 doi:10.1524/zkri.1990.191.3-4.287
Kucharczyk, W. (1990) Quadratic electrooptic effect in alkali halides*. Zeitschrift für Kristallographie - Crystalline Materials, 191 (3-4) 277 doi:10.1524/zkri.1990.191.3-4.277
Fischer, Werner, Marburg, (1990) Sphere Packings, Lattices and Groups. Zeitschrift für Kristallographie - Crystalline Materials, 191 (3-4) 286 doi:10.1524/zkri.1990.191.3-4.286
Paufler, P. (1990) Book Reviews. Zeitschrift für Kristallographie - Crystalline Materials, 191 (14) 285 doi:10.1524/zkri.1990.191.14.285
Solcher, Beate, Klöss, Gert, Paufler, Peter (1990) Slip band formation during bending of GaAs wafers. Zeitschrift für Kristallographie - Crystalline Materials, 192 (3) 201-218 doi:10.1524/zkri.1990.192.3-4.201
 
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