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Wang, Xiang, Chao, Song, Guo, Yan Qing, Song, Jie, Huang, Rui (2012) Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure. Key Engineering Materials, 531. 547-550 doi:10.4028/www.scientific.net/kem.531-532.547

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Reference TypeJournal (article/letter/editorial)
TitleAbnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure
JournalKey Engineering Materials
AuthorsWang, XiangAuthor
Chao, SongAuthor
Guo, Yan QingAuthor
Song, JieAuthor
Huang, RuiAuthor
Year2012 (December)Volume531
PublisherTrans Tech Publications, Ltd.
DOIdoi:10.4028/www.scientific.net/kem.531-532.547Search in ResearchGate
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Mindat Ref. ID12014711Long-form Identifiermindat:1:5:12014711:5
GUID0
Full ReferenceWang, Xiang, Chao, Song, Guo, Yan Qing, Song, Jie, Huang, Rui (2012) Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure. Key Engineering Materials, 531. 547-550 doi:10.4028/www.scientific.net/kem.531-532.547
Plain TextWang, Xiang, Chao, Song, Guo, Yan Qing, Song, Jie, Huang, Rui (2012) Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure. Key Engineering Materials, 531. 547-550 doi:10.4028/www.scientific.net/kem.531-532.547
In(n.d.) Key Engineering Materials Vol. 531. Trans Tech Publications, Ltd.

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(2012) Key Engineering Materials, 531. Trans Tech Publications, Ltd. doi:10.4028/www.scientific.net/kem.531-532
 
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