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Fathy, D., Narayan, J., Holland, O.W., Appleton, B.R., Davis, R.F. (1984) Microstructure analysis of Ni-SiC mixed layers. Materials Letters, 2. 324-327 doi:10.1016/0167-577x(84)90045-4

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Reference TypeJournal (article/letter/editorial)
TitleMicrostructure analysis of Ni-SiC mixed layers
JournalMaterials Letters
AuthorsFathy, D.Author
Narayan, J.Author
Holland, O.W.Author
Appleton, B.R.Author
Davis, R.F.Author
Year1984 (May)Volume2
PublisherElsevier BV
DOIdoi:10.1016/0167-577x(84)90045-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID12403742Long-form Identifiermindat:1:5:12403742:9
GUID0
Full ReferenceFathy, D., Narayan, J., Holland, O.W., Appleton, B.R., Davis, R.F. (1984) Microstructure analysis of Ni-SiC mixed layers. Materials Letters, 2. 324-327 doi:10.1016/0167-577x(84)90045-4
Plain TextFathy, D., Narayan, J., Holland, O.W., Appleton, B.R., Davis, R.F. (1984) Microstructure analysis of Ni-SiC mixed layers. Materials Letters, 2. 324-327 doi:10.1016/0167-577x(84)90045-4
In(n.d.) Materials Letters Vol. 2. Elsevier BV

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Narayan, J., Fathy, D., Holland, O.W., Appleton, B.R. (1985) Excimer laser mixing of nickel overlayers on silicon carbide. Materials Letters, 3. 261-264 doi:10.1016/0167-577x(85)90017-5
Fathy, D., Holland, O.W., Appleton, B.R., Stephenson, T.S. (1987) Characterization of ion implantation through thin Ti metal layers on Si. Materials Letters, 5. 315-321 doi:10.1016/0167-577x(87)90119-4
Narayan, J., Fathy, D., Oen, O.S., Holland, O.W. (1984) High-resolution imaging of ion-implantation damage and mechanism of amortization in semiconductors. Materials Letters, 2. 211-218 doi:10.1016/0167-577x(84)90026-0
Fathy, D., Holland, O.W., Narayan, J., Appleton, B.R. (1985) TEM study of ion beam mixed nickel silicides formed on SiC at different implant temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 571-575 doi:10.1016/0168-583x(85)90435-5
Narayan, J., Oen, O.S., Fathy, D., Holland, O.W. (1985) Atomic structure of collision cascades in ion-implanted silicon and channeling effects. Materials Letters, 3. 67-72 doi:10.1016/0167-577x(85)90001-1
Fathy, D, Holland, O.W, Liu, R, Wosik, J, Chu, W.K (2000) Cluster ion beam smoothing of SiC and YBCO surfaces. Materials Letters, 44. 248-252 doi:10.1016/s0167-577x(00)00037-9
Appleton, B.R., Holland, O.W., Poker, D.B., Narayan, J., Fathy, D. (1985) Morphological instabilities and ion beam mixing in Ge. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 639-644 doi:10.1016/0168-583x(85)90447-1
Appleton, B.R., Naramoto, H., White, C.W., Holland, O.W., McHargue, C.J., Farlow, G., Narayan, J., Williams, J.M. (1984) Ion implantation, ion beam mixing, and annealing studies of metals in Al2O3, SiC and Si3N4. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1 (2). 167-175 doi:10.1016/0168-583x(84)90064-8
Narayan, J. (1984) Nature of unseeded crystallization in semiconductors. Materials Letters, 2. 219-222 doi:10.1016/0167-577x(84)90027-2
(1984) MRS news. Materials Letters, 2. doi:10.1016/0167-577x(84)90165-4
Tunnicliffe, J., Blackmore, G.W., Irvine, S.J.C., Mullin, J.B., Holland, R. (1984) Sims analysis of impurities at CMT/CdTe heterostructure interfaces. Materials Letters, 2. 393-395 doi:10.1016/0167-577x(84)90118-6
 
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