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Su, Z., Farmer, J. W., Mizuta, M. (1993) Photoionization of theDXcenters in Te-dopedAlxGa1−xAs: Absence of two-step photoionization ofDXcenters. Physical Review B, 48 (7) 4412-4417 doi:10.1103/physrevb.48.4412

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Reference TypeJournal (article/letter/editorial)
TitlePhotoionization of theDXcenters in Te-dopedAlxGa1−xAs: Absence of two-step photoionization ofDXcenters
JournalPhysical Review B
AuthorsSu, Z.Author
Farmer, J. W.Author
Mizuta, M.Author
Year1993 (August 15)Volume48
Issue7
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.48.4412Search in ResearchGate
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Mindat Ref. ID14121569Long-form Identifiermindat:1:5:14121569:5
GUID0
Full ReferenceSu, Z., Farmer, J. W., Mizuta, M. (1993) Photoionization of theDXcenters in Te-dopedAlxGa1−xAs: Absence of two-step photoionization ofDXcenters. Physical Review B, 48 (7) 4412-4417 doi:10.1103/physrevb.48.4412
Plain TextSu, Z., Farmer, J. W., Mizuta, M. (1993) Photoionization of theDXcenters in Te-dopedAlxGa1−xAs: Absence of two-step photoionization ofDXcenters. Physical Review B, 48 (7) 4412-4417 doi:10.1103/physrevb.48.4412
In(1993, August) Physical Review B Vol. 48 (7) American Physical Society (APS)

See Also

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Su, Z., Farmer, J. W. (1992) Nonexponential photoionization ofDXcenters in Si-dopedAlxGa1−xAs. Physical Review B, 46 (15) 9772-9775 doi:10.1103/physrevb.46.9772
Henning, J. C. M., Ansems, J. P. M. (1988) Photoionization threshold of the deep donor in Si-dopedAlxGa1−xAs. Physical Review B, 38 (8) 5772-5775 doi:10.1103/physrevb.38.5772
Legros, R., Mooney, P. M., Wright, S. L. (1987) Photoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs. Physical Review B, 35 (14) 7505-7510 doi:10.1103/physrevb.35.7505
Bemelmans, H., Borghs, G., Langouche, G. (1994) Nuclear hyperfine interaction of theDXcenter and its persistent photoionization in Te-dopedAlxGa1−xAs. Physical Review Letters, 72 (6). 856-859 doi:10.1103/physrevlett.72.856
Dobaczewski, L., Kaczor, P. (1991) Direct evidence for two-step photoionization ofDX(Te) centers inAlxGa1−xAs. Physical Review Letters, 66 (1). 68-71 doi:10.1103/physrevlett.66.68
Huang, Q. S., Kang, J. Y., Wu, Z. Y., Liao, B. (1993) Evidence for twoDX-like centers in Sn-dopedAlxGa1−xAs. Physical Review B, 47 (20) 13215-13218 doi:10.1103/physrevb.47.13215
Inoue, Kaoru, Matsuno, Toshinobu (1993) Electron mobilities in modulation-dopedAlxGa1−xAs/GaAs and pseudomorphicAlxGa1−xAs/InyGa1−yAs quantum-well structures. Physical Review B, 47 (7) 3771-3778 doi:10.1103/physrevb.47.3771
Dobaczewski, L., Kaczor, P. (1991) Photoionization of theDX(Te) centers inAlxGa1−xAs: Evidence for a negative-Ucharacter of the defect. Physical Review B, 44 (16) 8621-8632 doi:10.1103/physrevb.44.8621
Laine, T., Mäkinen, J., Saarinen, K., Hautojärvi, P., Corbel, C., Fille, M. L., Gibart, P. (1996) Vacancylike structure of theDXcenter in Te-dopedAlxGa1−xAs. Physical Review B, 53 (16) 11025-11033 doi:10.1103/physrevb.53.11025
Surma, M., Żytkiewicz, Z., Fronc, K., Godlewski, M., Stallinga, P., Monemar, B. (1994) Magnetic-resonance studies of tellurium-dopedAlxGa1−xAs. Physical Review B, 50 (4) 2645-2648 doi:10.1103/physrevb.50.2645
Zhang, S. B., Chadi, D. J. (1990) Stability ofDXcenters inAlxGa1−xAs alloys. Physical Review B, 42 (11) 7174-7177 doi:10.1103/physrevb.42.7174
 
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