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Legros, R., Mooney, P. M., Wright, S. L. (1987) Photoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs. Physical Review B, 35 (14) 7505-7510 doi:10.1103/physrevb.35.7505

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Reference TypeJournal (article/letter/editorial)
TitlePhotoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs
JournalPhysical Review B
AuthorsLegros, R.Author
Mooney, P. M.Author
Wright, S. L.Author
Year1987 (May 15)Volume35
Issue14
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.35.7505Search in ResearchGate
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Mindat Ref. ID14095004Long-form Identifiermindat:1:5:14095004:7
GUID0
Full ReferenceLegros, R., Mooney, P. M., Wright, S. L. (1987) Photoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs. Physical Review B, 35 (14) 7505-7510 doi:10.1103/physrevb.35.7505
Plain TextLegros, R., Mooney, P. M., Wright, S. L. (1987) Photoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs. Physical Review B, 35 (14) 7505-7510 doi:10.1103/physrevb.35.7505
In(1987, May) Physical Review B Vol. 35 (14) American Physical Society (APS)

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Mooney, P. M., Northrop, G. A., Morgan, T. N., Grimmeiss, H. G. (1988) Evidence for large lattice relaxation at theDXcenter in Si-dopedAlxGa1−xAs. Physical Review B, 37 (14) 8298-8307 doi:10.1103/physrevb.37.8298
Mooney, P. M., Caswell, N. S., Wright, S. L. (1987) The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs. Journal of Applied Physics, 62 (12). 4786-4797 doi:10.1063/1.338981
Henning, J. C. M., Ansems, J. P. M. (1988) Photoionization threshold of the deep donor in Si-dopedAlxGa1−xAs. Physical Review B, 38 (8) 5772-5775 doi:10.1103/physrevb.38.5772
Laine, T., Mäkinen, J., Saarinen, K., Hautojärvi, P., Corbel, C., Fille, M. L., Gibart, P. (1996) Vacancylike structure of theDXcenter in Te-dopedAlxGa1−xAs. Physical Review B, 53 (16) 11025-11033 doi:10.1103/physrevb.53.11025
Su, Z., Farmer, J. W. (1992) Nonexponential photoionization ofDXcenters in Si-dopedAlxGa1−xAs. Physical Review B, 46 (15) 9772-9775 doi:10.1103/physrevb.46.9772
Mäkinen, J., Laine, T., Saarinen, K., Hautojärvi, P., Corbel, C., Airaksinen, V. M., Nagle, J. (1995) Microscopic structure of theDXcenter in Si-dopedAlxGa1−xAs: Observation of a vacancy by positron-annihilation spectroscopy. Physical Review B, 52 (7) 4870-4883 doi:10.1103/physrevb.52.4870
Bemelmans, H., Borghs, G., Langouche, G. (1994) Nuclear hyperfine interaction of theDXcenter and its persistent photoionization in Te-dopedAlxGa1−xAs. Physical Review Letters, 72 (6). 856-859 doi:10.1103/physrevlett.72.856
Baraldi, A., Frigeri, P., Ghezzi, C., Parisini, A., Bosacchi, A., Franchi, S., Gombia, E., Mosca, R. (1996) Coexistence of theDXcenter with nonmetastable states of the donor impurity in Si-dopedAlxGa1−xAs: Effects on the low-temperature electron mobility. Physical Review B, 53 (16) 10715-10727 doi:10.1103/physrevb.53.10715
Su, Z., Farmer, J. W., Mizuta, M. (1993) Photoionization of theDXcenters in Te-dopedAlxGa1−xAs: Absence of two-step photoionization ofDXcenters. Physical Review B, 48 (7) 4412-4417 doi:10.1103/physrevb.48.4412
Resca, Lorenzo (1987) Comment on ‘‘Comprehensive analysis of Si-dopedAlxGa1−xAs (x=0to 1): Theory and experiments’’. Physical Review B, 36 (8) 4452-4453 doi:10.1103/physrevb.36.4452
Sampaio, J. F., Chaves, A. S., Ribeiro, G. M., Guimarães, P. S. S., de Carvalho, R. P., de Oliveira, A. G. (1991) Transient and steady decay of persistent photoconductivity in Si-dopedAlxGa1−xAs. Physical Review B, 44 (19) 10933-10936 doi:10.1103/physrevb.44.10933
 
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