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Mooney, P. M., Caswell, N. S., Wright, S. L. (1987) The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs. Journal of Applied Physics, 62 (12). 4786-4797 doi:10.1063/1.338981

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Reference TypeJournal (article/letter/editorial)
TitleThe capture barrier of theDXcenter in Si‐doped AlxGa1−xAs
JournalJournal of Applied Physics
AuthorsMooney, P. M.Author
Caswell, N. S.Author
Wright, S. L.Author
Year1987 (December 15)Volume62
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.338981Search in ResearchGate
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Mindat Ref. ID5031736Long-form Identifiermindat:1:5:5031736:1
GUID0
Full ReferenceMooney, P. M., Caswell, N. S., Wright, S. L. (1987) The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs. Journal of Applied Physics, 62 (12). 4786-4797 doi:10.1063/1.338981
Plain TextMooney, P. M., Caswell, N. S., Wright, S. L. (1987) The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs. Journal of Applied Physics, 62 (12). 4786-4797 doi:10.1063/1.338981
In(1987, December) Journal of Applied Physics Vol. 62 (12) AIP Publishing

See Also

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Legros, R., Mooney, P. M., Wright, S. L. (1987) Photoionization cross section of theDXcenter in Si-dopedAlxGa1−xAs. Physical Review B, 35 (14) 7505-7510 doi:10.1103/physrevb.35.7505
Hanak, Thomas R., Ahrenkiel, Richard K., Timmons, Michael L. (1991) Capture barrier and the ionization entropy of theDXcenter in Se‐doped AlxGa1−xAs. Journal of Applied Physics, 69 (3). 1425-1428 doi:10.1063/1.347282
Calleja, E., Garcia, F., Gomez, A., Muñoz, E., Mooney, P. M., Morgan, T. N., Wright, S. L. (1990) Effects of the local environment on the properties ofDXcenters in Si‐doped GaAs and dilute AlxGa1−xAs alloys. Applied Physics Letters, 56 (10). 934-936 doi:10.1063/1.102630
Kirtley, J. R., Theis, T. N., Mooney, P. M., Wright, S. L. (1988) Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures. Journal of Applied Physics, 63 (5). 1541-1548 doi:10.1063/1.339938
Anand, S., Subramanian, S., Arora, B. M. (1990) Evidence for the alloy broadening of the emission and capture rates of theDXcenter from the frequency dependence of capacitance of Schottky barriers on AlxGa1−xAs: Si. Journal of Applied Physics, 67 (2). 1121-1123 doi:10.1063/1.345801
Mooney, P. M., Theis, T. N., Wright, S. L. (1988) Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content. Applied Physics Letters, 53 (25). 2546-2548 doi:10.1063/1.100203
Caswell, N. S., Mooney, P. M., Wright, S. L., Solomon, P. M. (1986) Effect of the silicon doping concentration on the recombination kinetics ofDXcenters in Al0.35Ga0.65As. Applied Physics Letters, 48 (16). 1093-1095 doi:10.1063/1.96608
Talwar, D. N., Manasreh, M. O., Suh, K. S., Covington, B. C. (1987) New evidence of small lattice relaxation for theDXcenter in AlxGa1−xAs. Applied Physics Letters, 51 (17). 1358-1360 doi:10.1063/1.98678
Howarth, D. S., Feucht, D. L. (1973) Barrier determinations on Ge–AlxGa1−xAs and GaAs–AlxGa1−xAs p‐n heterojunctions. Applied Physics Letters, 23 (7). 365-367 doi:10.1063/1.1654921
Nathan, M. I., Tiwari, S., Mooney, P. M., Wright, S. L. (1987) DXcenters in AlGaAsp‐nheterojunctions and heterojunction bipolar transistors. Journal of Applied Physics, 62 (8). 3234-3236 doi:10.1063/1.339326
Theis, T. N., Wright, S. L. (1986) Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions. Applied Physics Letters, 48 (20). 1374-1376 doi:10.1063/1.97028
 
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