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(1987, December) Journal of Applied Physics Vol. 62 (12) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year1987 (December)Volume62
Issue<   12
PublisherAIP Publishing
Mindat Ref. ID5031738Long-form Identifiermindat:1:5:5031738:9
GUID0
Full Reference(1987, December) Journal of Applied Physics Vol. 62 (12) AIP Publishing
Plain Text(1987, December) Journal of Applied Physics Vol. 62 (12) AIP Publishing
In(1987) Journal of Applied Physics Vol. 62. AIP Publishing

Contains

Johnson, D. J., Lockner, T. R., Poukey, J. W. (1987) Generation of GW VHF power pulses with a magnetically sweptebeam and inverseebeam diodes. Journal of Applied Physics, 62 (12). 4653-4661 doi:10.1063/1.339014
Bree, A., Leyderman, A., Taliani, C. (1987) Competition between second harmonic generation and one‐ and two‐photon absorption in the anthracene/9,10‐dihydroanthracene mixed crystal. Journal of Applied Physics, 62 (12). 4662-4667 doi:10.1063/1.339015
Flannery, Brian P., Roberge, W. G. (1987) Observational strategies for three‐dimensional synchrotron microtomography. Journal of Applied Physics, 62 (12). 4668-4674 doi:10.1063/1.339016
Rajbenbach, H. (1987) Digital optical processing with photorefractive materials: Applications of a parallel half‐adder circuit to algorithmic state machines. Journal of Applied Physics, 62 (12). 4675-4681 doi:10.1063/1.339017
van der Grinten, Jos G. M., van Dongen, Marinus E. H., van der Kogel, Hans (1987) Strain and pore pressure propagation in a water‐saturated porous medium. Journal of Applied Physics, 62 (12). 4682-4687 doi:10.1063/1.339018
Bletzinger, P., Flemming, Mark J. (1987) Impedance characteristics of an rf parallel plate discharge and the validity of a simple circuit model. Journal of Applied Physics, 62 (12). 4688-4695 doi:10.1063/1.339019
Dhali, S. K., Williams, P. F. (1987) Two‐dimensional studies of streamers in gases. Journal of Applied Physics, 62 (12). 4696-4707 doi:10.1063/1.339020
Harry, J. E., Evans, D. R. (1987) Magnetic stabilization of a rotating glow discharge. Journal of Applied Physics, 62 (12). 4708-4711 doi:10.1063/1.339021
Mazumder, J., Rockstroh, T. J., Krier, H. (1987) Spectroscopic studies of plasma during cw laser gas heating in flowing argon. Journal of Applied Physics, 62 (12). 4712-4718 doi:10.1063/1.339022
Novak, J. P. (1987) Electric field and electrode potential drops of arcs and glow discharges in air. Journal of Applied Physics, 62 (12). 4719-4724 doi:10.1063/1.339023
Sharma, A. K., Mishra, G. (1987) Filamentation instability in an inhomogeneous laser‐produced plasma. Journal of Applied Physics, 62 (12). 4725-4727 doi:10.1063/1.339024
Greenough, R. D., Dewhurst, R. J., Edwards, C. (1987) Magnetomechanical sensing of laser‐generated ultrasound to assess structural change in metallic amorphous ribbons. Journal of Applied Physics, 62 (12). 4728-4731 doi:10.1063/1.339025
Jansen, F., Machonkin, M. A., Palmieri, N., Kuhman, D. (1987) Thermomechanical properties of amorphous silicon and nonstoichiometric silicon oxide films. Journal of Applied Physics, 62 (12). 4732-4736 doi:10.1063/1.339026
Linnros, J., HolmĂ©n, G. (1987) Dose rate dependence and time constant of the ion‐beam‐induced crystallization mechanism in silicon. Journal of Applied Physics, 62 (12). 4737-4744 doi:10.1063/1.339027
Ahn, S. T., Griffin, P. B., Shott, J. D., Plummer, J. D., Tiller, W. A. (1987) A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion. Journal of Applied Physics, 62 (12). 4745-4755 doi:10.1063/1.339028
DePuydt, J. M., Cheng, H., Potts, J. E., Smith, T. L., Mohapatra, S. K. (1987) Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio. Journal of Applied Physics, 62 (12). 4756-4762 doi:10.1063/1.339029
Kushner, Mark J. (1987) A phenomenological model for surface deposition kinetics during plasma and sputter deposition of amorphous hydrogenated silicon. Journal of Applied Physics, 62 (12). 4763-4772 doi:10.1063/1.339030
Lu, Luke Su, Nishida, Toshikazu, Sah, Chih‐Tang (1987) Thermal emission and capture rates of holes at the gold donor level in silicon. Journal of Applied Physics, 62 (12). 4773-4780 doi:10.1063/1.339031
Mitchel, W. C., Yu, P. W. (1987) An antimony‐related electronic level in isovalently doped bulk GaAs. Journal of Applied Physics, 62 (12). 4781-4785 doi:10.1063/1.339032
Mooney, P. M., Caswell, N. S., Wright, S. L. (1987) The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs. Journal of Applied Physics, 62 (12). 4786-4797 doi:10.1063/1.338981
Senitzky, Benjamin, Schrimpf, Ronald D., Kerwin, William J. (1987) Efficiency of photoconductive switches. Journal of Applied Physics, 62 (12). 4798-4805 doi:10.1063/1.338982
Tomokage, H., Miyamoto, T., Okushi, H., Tokumaru, Y. (1987) Method of determining capture cross section including a slow capture of carriers in the depletion edge region. Journal of Applied Physics, 62 (12). 4806-4811 doi:10.1063/1.338983
Callegari, A., Ralph, D., Braslau, N., Latta, E., Spiers, G. D. (1987) Effect of interface states on the electrical properties of W, WSix, and WAlxSchottky contacts on GaAs. Journal of Applied Physics, 62 (12). 4812-4820 doi:10.1063/1.338984
Ekin, J. W., Braginski, A. I., Panson, A. J., Janocko, M. A., Capone, D. W., Zaluzec, N. J., Flandermeyer, B., de Lima, O. F., Hong, M., Kwo, J., Liou, S. H. (1987) Evidence for weak link and anisotropy limitations on the transport critical current in bulk polycrystalline Y1Ba2Cu3Ox. Journal of Applied Physics, 62 (12). 4821-4828 doi:10.1063/1.338985
Ekin, J. W. (1987) Effect of transverse compressive stress on the critical current and upper critical field of Nb3Sn. Journal of Applied Physics, 62 (12). 4829-4834 doi:10.1063/1.338986
Chang, S.‐K., Lee, D., Nakata, H., Nurmikko, A. V., Kolodziejski, L. A., Gunshor, R. L. (1987) Frustrated antiferromagnetism at heterointerfaces in a semiconductor superlattice: MnSe/ZnSe. Journal of Applied Physics, 62 (12). 4835-4838 doi:10.1063/1.338987
Gnatzig, K., Dötsch, H., Ye, M., Brockmeyer, A. (1987) Ferrimagnetic resonance in garnet films at large precession angles. Journal of Applied Physics, 62 (12). 4839-4843 doi:10.1063/1.338988
Sawicka, B. D., Sawicki, J. A., Behrisch, R. (1987) Mössbauer spectroscopy analysis of plasma‐driven carbide formation on graphite limiters in the axis symmetric divertor tokamak experiment. Journal of Applied Physics, 62 (12). 4844-4852 doi:10.1063/1.338989
Sawicka, B. D., Sawicki, J. A. (1987) Mössbauer study of iron aggregation on graphite; thermal simulation of dropletlike metals deposition in tokamaks. Journal of Applied Physics, 62 (12). 4853-4857 doi:10.1063/1.338990
Reddy, U. K., HoudrĂ©, R., Munns, G., Ji, G., Morkoç, H., Longerbone, M., Davis, L., Gu, B. P., Otsuka, N. (1987) Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular‐beam epitaxy. Journal of Applied Physics, 62 (12). 4858-4862 doi:10.1063/1.339832
Truong, Vo‐van, Courteau, Pierre, Singh, Jai (1987) Optical properties of very fine Al particles: Quantum size effect. Journal of Applied Physics, 62 (12). 4863-4866 doi:10.1063/1.338991
Woollam, John A., Snyder, Paul G., McCormick, Anthony W., Rai, A. K., Ingram, David, Pronko, Peter P. (1987) Ellipsometric measurements of molecular‐beam‐epitaxy‐grown semiconductor multilayer thicknesses: A comparative study. Journal of Applied Physics, 62 (12). 4867-4871 doi:10.1063/1.338992
Wells, Oliver C., Cheng, Ping‐Chin (1987) Examination of uncoated photoresist by the low‐loss electron method in the scanning electron microscope. Journal of Applied Physics, 62 (12). 4872-4877 doi:10.1063/1.338993
Alvi, N. S., Tang, S. M., Kwor, R., Fulcher, M. R. (1987) Recrystallization by rapid thermal annealing of implanted low‐pressure chemical‐vapor‐deposited amorphous Si films. Journal of Applied Physics, 62 (12). 4878-4883 doi:10.1063/1.338994
Arata, Yoshiaki, Kobayashi, Akira, Habara, Yasuhiro (1987) Ceramic coatings produced by means of a gas tunnel‐type plasma jet. Journal of Applied Physics, 62 (12). 4884-4889 doi:10.1063/1.338995
Yang, K., Carle, J., Kleinhenz, R. (1987) Formation of the oxygen precipitate‐free zone in silicon. Journal of Applied Physics, 62 (12). 4890-4896 doi:10.1063/1.338996
Wijaranakula, W., Matlock, J. H., Mollenkopf, H. (1987) Oxygen precipitation and bulk microdefects induced by the pre‐ and postepitaxial annealing inN/N+(100) silicon wafers. Journal of Applied Physics, 62 (12). 4897-4902 doi:10.1063/1.338997
Johnson, Phelps B., McMillan, Christopher S., Ellis, Arthur B., Hobson, William S. (1987) Photoluminescent properties ofp‐GaAs electrodes related to the ‘‘photocurrent anomaly’’: Determination of surface electron‐capture velocities and depletion widths in photoelectrochemical cells. Journal of Applied Physics, 62 (12). 4903-4908 doi:10.1063/1.338998
Cole, E. I., Bagnell, C. R., Davies, B., Neacsu, A., Oxford, W., Roy, S., Propst, R. H. (1987) A novel method for depth profiling and imaging of semiconductor devices using capacitive coupling voltage contrast. Journal of Applied Physics, 62 (12). 4909-4915 doi:10.1063/1.338999
Maniv, S., Shamay, M., Sinai, Y. (1987) Strain‐induced current leakage in InSb photovoltaic detectors. Journal of Applied Physics, 62 (12). 4916-4918 doi:10.1063/1.339000
Hartmann, U. (1987) NĂ©el‐line motion along Bloch walls. Journal of Applied Physics, 62 (12). 4918-4920 doi:10.1063/1.339001
Stern, M. B., Brody, E., Sowell, B. (1987) InP electroluminescence as a tool to directly monitor carrier leakage in InGaAsP/InP buried heterostructure lasers. Journal of Applied Physics, 62 (12). 4920-4923 doi:10.1063/1.339002
Olsson, H. K., McGrath, W. R., Claeson, T., Eriksson, S., Johansson, L.‐G. (1987) A millimeter wave Josephson mixer employing a high‐TcGdBaCuO point contact. Journal of Applied Physics, 62 (12). 4923-4926 doi:10.1063/1.339003
Furtado, Mário T., Loural, Maria Salete S., Sachs, Antonio C. (1987) Measurement of conduction band offsets in Ga0.94Al0.06As:Ga0.57Al0.43As heterojunctions by electrochemicalC‐Vprofiling. Journal of Applied Physics, 62 (12). 4926-4928 doi:10.1063/1.339004
Korenstein, R., Hoke, W. E., Lemonias, P. J., Higa, K. T., Harris, D. C. (1987) Metalorganic growth of HgTe and CdTe at low temperatures using diallyltelluride. Journal of Applied Physics, 62 (12). 4929-4931 doi:10.1063/1.339005
El‐Hennawi, H. A., El‐Diasty, F., Meshrif, O. (1987) Interferometric determination of the refractive index of optical fiber cladding and an examination of its homogeneity. Journal of Applied Physics, 62 (12). 4931-4933 doi:10.1063/1.339006
Takizawa, Ritsuo, Nakanishi, Toshiro, Ohsawa, Akira (1987) Degradation of metal‐oxide‐semiconductor devices caused by iron impurities on the silicon wafer surface. Journal of Applied Physics, 62 (12). 4933-4935 doi:10.1063/1.339822
Gasgnier, M., Ruault, M.‐O. (1987) Microstructural observations of RBa2Cu3O7(R=Gd, Y, and Tm) superconductor thin crystals between 15 and 1000 K. Journal of Applied Physics, 62 (12). 4935-4938 doi:10.1063/1.339796
Luo, Marie Shiang‐Chyong, Sah, Chih‐Tang (1987) Annealing of interface states on oxidized silicon during chip bonding. Journal of Applied Physics, 62 (12). 4938-4940 doi:10.1063/1.339797
Spence, David, Tanaka, Hiroshi, Dillon, M. A. (1987) Photoabsorption cross section of XeF2 from 150 to 275 nm by forward‐scattering electron energy‐loss spectroscopy. Journal of Applied Physics, 62 (12). 4940-4942 doi:10.1063/1.339798
Manion, S.J., Hess, K. (1987) Phonon energy dependence of scattering in quasi‐two‐dimensional electron gases at low temperature. Journal of Applied Physics, 62 (12). 4942-4944 doi:10.1063/1.339799
Fickett, W. (1987) Motion of a plate driven by an explosive. Journal of Applied Physics, 62 (12). 4945-4946 doi:10.1063/1.339800

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