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(1987, December) Applied Physics Letters Vol. 51 (24) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1987 (December)Volume51
Issue<   24   >
PublisherAIP Publishing
Mindat Ref. ID8481723Long-form Identifiermindat:1:5:8481723:7
GUID0
Full Reference(1987, December) Applied Physics Letters Vol. 51 (24) AIP Publishing
Plain Text(1987, December) Applied Physics Letters Vol. 51 (24) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 51. AIP Publishing

Contains

Mori, Yoshihiro, Shibata, Jun, Kajiwara, Takao (1987) Optical polarization bistability with high switching speed in a TM wave injected buried heterostructure laser. Applied Physics Letters, 51 (24). 1971-1973 doi:10.1063/1.98314
Magari, Katsuaki, Kawaguchi, Hitoshi, Oe, Kunishige, Nakano, Yoshinori, Fukuda, Mitsuo (1987) Optical signal selection with a constant gain and a gain bandwidth by a multielectrode distributed feedback laser amplifier. Applied Physics Letters, 51 (24). 1974-1976 doi:10.1063/1.98315
Silversmith, A. J., Lenth, W., Macfarlane, R. M. (1987) Green infrared‐pumped erbium upconversion laser. Applied Physics Letters, 51 (24). 1977-1979 doi:10.1063/1.98316
Okayasu, Masanobu, Kozen, Atsuo, Hasumi, Yuji, Temmyo, Jiro, Uehara, Shingo (1987) Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi‐insulating blocking layers. Applied Physics Letters, 51 (24). 1980-1982 doi:10.1063/1.98317
Thornton, Robert L., Epler, John E., Paoli, Thomas L. (1987) Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity‐induced disordering. Applied Physics Letters, 51 (24). 1983-1985 doi:10.1063/1.98318
Kannari, F., Kimura, W. D., Seamans, J. F., Guyer, Dean R. (1987) Xenon excited state density measurements in electron beam pumped XeCl laser mixtures. Applied Physics Letters, 51 (24). 1986-1988 doi:10.1063/1.98319
Turco, F., Massies, J. (1987) Strain‐induced In incorporation coefficient variation in the growth of Al1−xInxAs alloys by molecular beam epitaxy. Applied Physics Letters, 51 (24). 1989-1991 doi:10.1063/1.98320
Choi, C.‐H., Harper, R. A., Yapsir, A. S., Lu, T.‐M. (1987) Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition. Applied Physics Letters, 51 (24). 1992-1994 doi:10.1063/1.98321
Unlu, M. S., Munns, G., Chen, J., Won, T., Unlu, H., Morkoç, H., Radhakrishnan, G., Katz, J., Verret, D. (1987) Characteristics of annealedp/njunctions between GaAs and Si (100). Applied Physics Letters, 51 (24). 1995-1997 doi:10.1063/1.98322
Amano, Chikara, Sugiura, Hideo, Yamamoto, Akio, Yamaguchi, Masafumi (1987) 20.2% efficiency Al0.4Ga0.6As/GaAs tandem solar cells grown by molecular beam epitaxy. Applied Physics Letters, 51 (24). 1998-2000 doi:10.1063/1.98272
Kondow, Masahiko, Minagawa, Shigekazu, Satoh, Shin (1987) Raman scattering from AlGaInP. Applied Physics Letters, 51 (24). 2001-2003 doi:10.1063/1.98273
Mimila‐Arroyo, J., Castanedo, R., Chávez, F., González, R., Navarro, G., Reynoso, A. (1987) Gallium arsenide field‐effect transistor by close spaced vapor transport epitaxy. Applied Physics Letters, 51 (24). 2004-2006 doi:10.1063/1.98274
Chinn, J. D. (1987) Ion beam enhanced magnetron reactive ion etching. Applied Physics Letters, 51 (24). 2007-2009 doi:10.1063/1.98275
Liou, Jenn‐Chorng, Lau, Kei May (1987) Slow relaxation and electric field quenching of persistent conductivity in GaAs metal‐semiconductor field‐effect transistors with different buffer layer structures. Applied Physics Letters, 51 (24). 2010-2012 doi:10.1063/1.98276
Ihm, Yeong‐Eon, Otsuka, N., Klem, J., Morkoç, H. (1987) Ordering in GaAs1−xSbxgrown by molecular beam epitaxy. Applied Physics Letters, 51 (24). 2013-2015 doi:10.1063/1.98277
Comfort, James H., Reif, Rafael (1987) Plasma‐enhanced deposition of high‐quality epitaxial silicon at low temperatures. Applied Physics Letters, 51 (24). 2016-2018 doi:10.1063/1.98278
Kshirsagar, S. T., Rajarshi, S. V., Dusane, R. O., Vaidya, Jayashri, Bhide, V. G. (1987) Raman scattering studies of ion beam induced mixing at the amorphous germanium/crystalline silicon interface. Applied Physics Letters, 51 (24). 2019-2021 doi:10.1063/1.98279
Skromme, B. J., Sandroff, C. J., Yablonovitch, E., Gmitter, T. (1987) Effects of passivating ionic films on the photoluminescence properties of GaAs. Applied Physics Letters, 51 (24). 2022-2024 doi:10.1063/1.98280
Wijewarnasuriya, P. S., Sou, I. K., Kim, Y. J., Mahavadi, K. K., Sivananthan, S., Boukerche, M., Faurie, J. P. (1987) Electrical properties of Li‐doped Hg1−xCdxTe(100) by molecular beam epitaxy. Applied Physics Letters, 51 (24). 2025-2027 doi:10.1063/1.98281
Palmour, J. W., Kong, H. S., Davis, R. F. (1987) High‐temperature depletion‐mode metal‐oxide‐semiconductor field‐effect transistors in beta‐SiC thin films. Applied Physics Letters, 51 (24). 2028-2030 doi:10.1063/1.98282
Marek, H. S., Serreze, H. B. (1987) Diffusion coefficients and activation energies for Zn diffusion into undoped and S‐doped InP. Applied Physics Letters, 51 (24). 2031-2033 doi:10.1063/1.98981
Shen, Yu‐Tang, Myles, Charles W. (1987) Deep levels associated with vacancy‐impurity complexes in GaAs. Applied Physics Letters, 51 (24). 2034-2036 doi:10.1063/1.98283
Matsuo, Jiro, Kato, Ichiro, Horie, Hiroshi, Nakayama, Noriaki, Ishikawa, Hajime (1987) Abnormal solid solution and activation behavior in Ga‐implanted Si(100). Applied Physics Letters, 51 (24). 2037-2039 doi:10.1063/1.98284
Datta, M., Romankiw, L. T., Vigliotti, D. R., von Gutfeld, R. J. (1987) Laser etching of metals in neutral salt solutions. Applied Physics Letters, 51 (24). 2040-2042 doi:10.1063/1.98285
Kautz, R. L., Lloyd, Frances L. (1987) Precision of series‐array Josephson voltage standards. Applied Physics Letters, 51 (24). 2043-2045 doi:10.1063/1.98286
Leung, M., Broussard, P. R., Claassen, J. H., Osofsky, M., Wolf, S. A., Strom, U. (1987) Optical detection in thin granular films of Y‐Ba‐Cu‐O at temperatures between 4.2 and 100 K. Applied Physics Letters, 51 (24). 2046-2047 doi:10.1063/1.98287
Hadjipanayis, G. C., Aly, S. H., Cheng, Shu‐Fan (1987) Hard magnetic properties ofR‐Fe‐Ti alloys. Applied Physics Letters, 51 (24). 2048-2050 doi:10.1063/1.98288
Lin, L.‐J., Wernick, J. H., Tabatabaie, N., Hull, G. W., Meagher, B. (1987) Structure and magnetic properties of the dilute magnetic semiconductor Mn:CuInTe2. Applied Physics Letters, 51 (24). 2051-2053 doi:10.1063/1.98289
Eyett, M., Bäuerle, D. (1987) Influence of the beam spot size on ablation rates in pulsed‐laser processing. Applied Physics Letters, 51 (24). 2054-2055 doi:10.1063/1.98290
Landauer, Rolf (1987) Energy requirements in communication. Applied Physics Letters, 51 (24). 2056-2058 doi:10.1063/1.98291
Comita, Paul B., Kodas, Toivo T. (1987) Modulated laser beam relaxation spectrometry of laser‐induced chemical vapor deposition. Applied Physics Letters, 51 (24). 2059-2061 doi:10.1063/1.98292
Fang, P. H. (1987) Comment on ‘‘Diffusion model for the laser oxidation of metallic samples in air’’ [Appl. Phys. Lett.49, 109 (1987)]. Applied Physics Letters, 51 (24). 2062 doi:10.1063/1.98293
Ursu, I., Nanu, L., Mihailescu, I. N. (1987) Response to ‘‘Comment on ‘Diffusion model for the laser oxidation of metallic samples in air’ ’’ [Appl. Phys. Lett.51, 2062 (1987)]. Applied Physics Letters, 51 (24). 2062-2063 doi:10.1063/1.98294

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