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Comfort, James H., Reif, Rafael (1987) Plasma‐enhanced deposition of high‐quality epitaxial silicon at low temperatures. Applied Physics Letters, 51 (24). 2016-2018 doi:10.1063/1.98278

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Reference TypeJournal (article/letter/editorial)
TitlePlasma‐enhanced deposition of high‐quality epitaxial silicon at low temperatures
JournalApplied Physics Letters
AuthorsComfort, James H.Author
Reif, RafaelAuthor
Year1987 (December 14)Volume51
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.98278Search in ResearchGate
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Mindat Ref. ID8481736Long-form Identifiermindat:1:5:8481736:1
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Full ReferenceComfort, James H., Reif, Rafael (1987) Plasma‐enhanced deposition of high‐quality epitaxial silicon at low temperatures. Applied Physics Letters, 51 (24). 2016-2018 doi:10.1063/1.98278
Plain TextComfort, James H., Reif, Rafael (1987) Plasma‐enhanced deposition of high‐quality epitaxial silicon at low temperatures. Applied Physics Letters, 51 (24). 2016-2018 doi:10.1063/1.98278
In(1987, December) Applied Physics Letters Vol. 51 (24) AIP Publishing

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Comfort, James H., Reif, Rafael (1987) Insituarsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor deposition. Applied Physics Letters, 51 (19). 1536-1538 doi:10.1063/1.98627
Comfort, James H., Reif, Rafael (1989) Plasma‐enhanced chemical vapor deposition ofinsitudoped epitaxial silicon at low temperatures. I. Arsenic doping. Journal of Applied Physics, 65 (3). 1053-1066 doi:10.1063/1.343040
Comfort, James H., Reif, Rafael (1989) Plasma‐enhanced chemical vapor deposition ofinsitudoped epitaxial silicon at low temperatures. II. Boron doping. Journal of Applied Physics, 65 (3). 1067-1073 doi:10.1063/1.343041
Comfort, James H., Garverick, Linda M., Reif, Rafael (1987) Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations. Journal of Applied Physics, 62 (8). 3388-3397 doi:10.1063/1.339301
Ohi, S., Burger, W. R., Reif, R. (1988) Enhanced electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition. Applied Physics Letters, 53 (10). 891-893 doi:10.1063/1.100106
Garverick, L. M., Comfort, J. H., Yew, T. R., Reif, R., Baiocchi, F. A., Luftman, H. S. (1987) Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial deposition. II. Epitaxial quality. Journal of Applied Physics, 62 (8). 3398-3404 doi:10.1063/1.339302
Tsai, Julie A., Reif, Rafael (1995) Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition. Applied Physics Letters, 66 (14). 1809-1811 doi:10.1063/1.113329
Comfort, James H. (1989) Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures. Journal of the Electrochemical Society, 136. 2386pp. doi:10.1149/1.2097378
Comfort, James H. (1989) Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures. Journal of the Electrochemical Society, 136. 2398pp. doi:10.1149/1.2097381
Burger, W. R., Reif, R. (1987) Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon. Applied Physics Letters, 50 (20). 1447-1449 doi:10.1063/1.97850
Yew, Tri‐Rung, Reif, Rafael (1990) Insitudoping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 57 (19). 2010-2012 doi:10.1063/1.103993
 
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