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Burger, W. R., Reif, R. (1987) Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon. Applied Physics Letters, 50 (20). 1447-1449 doi:10.1063/1.97850

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Reference TypeJournal (article/letter/editorial)
TitleBulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon
JournalApplied Physics Letters
AuthorsBurger, W. R.Author
Reif, R.Author
Year1987 (May 18)Volume50
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.97850Search in ResearchGate
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Mindat Ref. ID8480143Long-form Identifiermindat:1:5:8480143:0
GUID0
Full ReferenceBurger, W. R., Reif, R. (1987) Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon. Applied Physics Letters, 50 (20). 1447-1449 doi:10.1063/1.97850
Plain TextBurger, W. R., Reif, R. (1987) Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon. Applied Physics Letters, 50 (20). 1447-1449 doi:10.1063/1.97850
In(1987, May) Applied Physics Letters Vol. 50 (20) AIP Publishing

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Burger, W. R., Reif, R. (1988) Electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon: The effect of deposition temperature. Journal of Applied Physics, 63 (2). 368-382 doi:10.1063/1.340248
Ohi, S., Burger, W. R., Reif, R. (1988) Enhanced electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition. Applied Physics Letters, 53 (10). 891-893 doi:10.1063/1.100106
Burger, W. R., Reif, R. (1987) An optimizedinsituargon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor andpnjunction characterization. Journal of Applied Physics, 62 (10). 4255-4268 doi:10.1063/1.339099
Burger, W. R., Reif, R. (1988) Electrical quality of low‐temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate. Journal of Applied Physics, 63 (2). 383-389 doi:10.1063/1.340249
Donahue, T. J., Burger, W. R., Reif, R. (1984) Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement. Applied Physics Letters, 44 (3). 346-348 doi:10.1063/1.94754
Garverick, L. M., Comfort, J. H., Yew, T. R., Reif, R., Baiocchi, F. A., Luftman, H. S. (1987) Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial deposition. II. Epitaxial quality. Journal of Applied Physics, 62 (8). 3398-3404 doi:10.1063/1.339302
Comfort, James H., Reif, Rafael (1987) Plasma‐enhanced deposition of high‐quality epitaxial silicon at low temperatures. Applied Physics Letters, 51 (24). 2016-2018 doi:10.1063/1.98278
Kung, K. T.‐Y., Reif, R. (1987) Polycrystalline Si thin‐film transistors fabricated at ≤800 °C: Effects of grain size and {110} fiber texture. Journal of Applied Physics, 62 (4). 1503-1509 doi:10.1063/1.339610
Comfort, James H., Reif, Rafael (1987) Insituarsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor deposition. Applied Physics Letters, 51 (19). 1536-1538 doi:10.1063/1.98627
Metzger, R. A., Hafizi, M., Stanchina, W. E., Liu, T., Wilson, R. G., McCray, L. G. (1993) Confinement of high Be doping levels in AlInAs/GaInAsnpnheterojunction bipolar transistors by low temperature molecular‐beam epitaxial growth. Applied Physics Letters, 63 (10). 1360-1362 doi:10.1063/1.109677
Kung, K. T.‐Y., Reif, R. (1987) Comparison of thin‐film transistors fabricated at low temperatures (≤600 °C) on as‐deposited and amorphized‐crystallized polycrystalline Si. Journal of Applied Physics, 61 (4). 1638-1642 doi:10.1063/1.338949
 
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