(1987, May) Applied Physics Letters Vol. 50 (20) AIP Publishing

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Reference Type	Journal (issue)
Journal	Applied Physics Letters
Year	1987 (May)	Volume	50
Issue	< 20 >
Publisher	AIP Publishing
Mindat Ref. ID	8480100	Long-form Identifier	mindat:1:5:8480100:5
GUID	0
Full Reference	(1987, May) Applied Physics Letters Vol. 50 (20) AIP Publishing
Plain Text	(1987, May) Applied Physics Letters Vol. 50 (20) AIP Publishing
In	(n.d.) Applied Physics Letters Vol. 50. AIP Publishing

Contains

	Segev, Mordechai, Weiss, Shimon, Fischer, Baruch (1987) Coupling of diode laser arrays with photorefractive passive phase conjugate mirrors. Applied Physics Letters, 50 (20). 1397-1399 doi:10.1063/1.97832
	Hill, P., Olshansky, R., Schlafer, J., Powazinik, W. (1987) Reduction of relative intensity noise in 1.3 μm InGaAsP semiconductor lasers. Applied Physics Letters, 50 (20). 1400-1402 doi:10.1063/1.97833
	Leopold, M. M., Specht, A. P., Zmudzinski, C. A., Givens, M. E., Coleman, J. J. (1987) Temperature‐dependent factors contributing toT0in graded‐index separate‐confinement‐heterostructure single quantum well lasers. Applied Physics Letters, 50 (20). 1403-1405 doi:10.1063/1.97834
	*Chen, Y. C., Liu, J. M. (1987) Polarization bistability in semiconductor laser: Rate equation analysis. Applied Physics Letters, 50 (20). 1406-1408 doi:10.1063/1.97835*
	*Green, C. A., Dutta, N. K., Watson, W. (1987) Linewidth enhancement factor in InGaAsP/InP multiple quantum well lasers. Applied Physics Letters, 50 (20). 1409-1410 doi:10.1063/1.97836*
	*Hirao, M., Hara, N. (1987) Ultrasonic pole figure for the texture of an aluminum alloy. Applied Physics Letters, 50 (20). 1411-1412 doi:10.1063/1.97837*
	*Nakamura, Kiyoshi, Ando, Haruyasu, Shimizu, Hiroshi (1987) Ferroelectric domain inversion caused in LiNbO3plates by heat treatment. Applied Physics Letters, 50 (20). 1413-1414 doi:10.1063/1.97838*
	*Rodbell, K. P., Ficalora, P. J., Koch, Roger (1987) Effect of hydrogen on electromigration and 1/fnoise in gold films. Applied Physics Letters, 50 (20). 1415-1416 doi:10.1063/1.97839*
	Ourmazd, A., Tsang, W. T., Rentschler, J. A., Taylor, D. W. (1987) Determination of the atomic configuration at semiconductor interfaces. Applied Physics Letters, 50 (20). 1417-1419 doi:10.1063/1.97840
	*Renschler, C. L., Sylwester, A. P. (1987) Conductive, spin‐cast carbon films from polyacrylonitrile. Applied Physics Letters, 50 (20). 1420-1422 doi:10.1063/1.97841*
	Petruzzello, J., Olego, D., Ghandhi, S. K., Taskar, N. R., Bhat, I. (1987) Transmission electron microscopy of (001) CdTe on (001) GaAs grown by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (20). 1423-1425 doi:10.1063/1.97842
	*Filas, Robert W., Patel, J. S. (1987) Chemically induced high‐tilt surfaces for liquid crystals. Applied Physics Letters, 50 (20). 1426-1428 doi:10.1063/1.97843*
	Matsusue, Toshio, Sakaki, Hiroyuki (1987) Radiative recombination coefficient of free carriers in GaAs‐AlGaAs quantum wells and its dependence on temperature. Applied Physics Letters, 50 (20). 1429-1431 doi:10.1063/1.97844
	Sugawara, M., Kondo, M., Nakai, K., Yamaguchi, A., Nakajima, K. (1987) Activation ratio of Fe in Fe‐doped semi‐insulating InP epitaxial layers grown by liquid phase epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters, 50 (20). 1432-1434 doi:10.1063/1.97845
	Kobayashi, Naoki, Makimoto, Toshiki, Horikoshi, Yoshiji (1987) Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy. Applied Physics Letters, 50 (20). 1435-1437 doi:10.1063/1.97846
	*Kachwalla, Z., Miller, D. J. (1987) Transient spectroscopy using the Hall effect. Applied Physics Letters, 50 (20). 1438-1440 doi:10.1063/1.97847*
	Srinivasa, R., Panish, M. B., Temkin, H. (1987) Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces. Applied Physics Letters, 50 (20). 1441-1443 doi:10.1063/1.97848
	*Rao, Mulpuri V., Thompson, Phillip E. (1987) Two‐step rapid thermal annealing of Si‐implanted InP:Fe. Applied Physics Letters, 50 (20). 1444-1446 doi:10.1063/1.97849*
	*Burger, W. R., Reif, R. (1987) Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon. Applied Physics Letters, 50 (20). 1447-1449 doi:10.1063/1.97850*
	*Carlos, W. E. (1987) Paramagnetic centers at Si‐SiO2interfaces in silicon‐on‐insulator films. Applied Physics Letters, 50 (20). 1450-1452 doi:10.1063/1.97798*
	Aboelfotoh, M. O., Tawancy, H. M., d’Heurle, F. M. (1987) Transmission electron microscope study of the formation of Ni2Si and NiSi on amorphous silicon. Applied Physics Letters, 50 (20). 1453-1454 doi:10.1063/1.97799
	*Martin, Y., Wickramasinghe, H. K. (1987) Magnetic imaging by ‘‘force microscopy’’ with 1000 Å resolution. Applied Physics Letters, 50 (20). 1455-1457 doi:10.1063/1.97800*

	*(1987, May) Applied Physics Letters* Vol. 50 (18) AIP Publishing**
	*(1987, May) Applied Physics Letters* Vol. 50 (19) AIP Publishing**
	*(1987, May) Applied Physics Letters* Vol. 50 (21) AIP Publishing**
	*(1972, May) Applied Physics Letters* Vol. 20 (10) AIP Publishing**
	*(1972, May) Applied Physics Letters* Vol. 20 (9) AIP Publishing**
	*(1995, May) Applied Physics Letters* Vol. 66 (20) AIP Publishing**
	*(1996, May) Applied Physics Letters* Vol. 68 (20) AIP Publishing**
	*(1997, May) Applied Physics Letters* Vol. 70 (20) AIP Publishing**
	*(1998, May) Applied Physics Letters* Vol. 72 (20) AIP Publishing**
	*(1999, May) Applied Physics Letters* Vol. 74 (20) AIP Publishing**
	*(1986, May) Applied Physics Letters* Vol. 48 (20) AIP Publishing**

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(1987, May) Applied Physics Letters Vol. 50 (20) AIP Publishing

Contains

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