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Donahue, T. J., Burger, W. R., Reif, R. (1984) Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement. Applied Physics Letters, 44 (3). 346-348 doi:10.1063/1.94754

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Reference TypeJournal (article/letter/editorial)
TitleLow‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement
JournalApplied Physics Letters
AuthorsDonahue, T. J.Author
Burger, W. R.Author
Reif, R.Author
Year1984 (February)Volume44
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.94754Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8473464Long-form Identifiermindat:1:5:8473464:2
GUID0
Full ReferenceDonahue, T. J., Burger, W. R., Reif, R. (1984) Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement. Applied Physics Letters, 44 (3). 346-348 doi:10.1063/1.94754
Plain TextDonahue, T. J., Burger, W. R., Reif, R. (1984) Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement. Applied Physics Letters, 44 (3). 346-348 doi:10.1063/1.94754
In(1984, February) Applied Physics Letters Vol. 44 (3) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Donahue, T. J., Reif, R. (1985) Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement. Journal of Applied Physics, 57 (8). 2757-2765 doi:10.1063/1.335418
DONAHUE, T. J., REIF, R. (1986) ChemInform Abstract: Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Chemischer Informationsdienst, 17 (47) doi:10.1002/chin.198647379
Ohi, S., Burger, W. R., Reif, R. (1988) Enhanced electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition. Applied Physics Letters, 53 (10). 891-893 doi:10.1063/1.100106
Donahue, T. J. (1986) Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Journal of the Electrochemical Society, 133. 1691pp. doi:10.1149/1.2108995
Donahue, T. J. (1986) Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Journal of the Electrochemical Society, 133. 1697pp. doi:10.1149/1.2108996
Donahue, T. J. (1986) Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Journal of the Electrochemical Society, 133. 1701pp. doi:10.1149/1.2108998
Tsai, Julie A., Reif, Rafael (1995) Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition. Applied Physics Letters, 66 (14). 1809-1811 doi:10.1063/1.113329
Burger, W. R., Reif, R. (1988) Electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon: The effect of deposition temperature. Journal of Applied Physics, 63 (2). 368-382 doi:10.1063/1.340248
Burger, W. R., Reif, R. (1988) Electrical quality of low‐temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate. Journal of Applied Physics, 63 (2). 383-389 doi:10.1063/1.340249
Burger, W. R., Reif, R. (1987) Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep=800 °C) epitaxial silicon. Applied Physics Letters, 50 (20). 1447-1449 doi:10.1063/1.97850
Jang, Syun‐Ming, Reif, Rafael (1991) Temperature dependence of Si1−xGexepitaxial growth using very low pressure chemical vapor deposition. Applied Physics Letters, 59 (24). 3162-3164 doi:10.1063/1.106399
 
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