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Donahue, T. J., Reif, R. (1985) Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement. Journal of Applied Physics, 57 (8). 2757-2765 doi:10.1063/1.335418

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Reference TypeJournal (article/letter/editorial)
TitleSilicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement
JournalJournal of Applied Physics
AuthorsDonahue, T. J.Author
Reif, R.Author
Year1985 (April 15)Volume57
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.335418Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5023930Long-form Identifiermindat:1:5:5023930:0
GUID0
Full ReferenceDonahue, T. J., Reif, R. (1985) Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement. Journal of Applied Physics, 57 (8). 2757-2765 doi:10.1063/1.335418
Plain TextDonahue, T. J., Reif, R. (1985) Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement. Journal of Applied Physics, 57 (8). 2757-2765 doi:10.1063/1.335418
In(1985, April) Journal of Applied Physics Vol. 57 (8) AIP Publishing

See Also

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Donahue, T. J., Burger, W. R., Reif, R. (1984) Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement. Applied Physics Letters, 44 (3). 346-348 doi:10.1063/1.94754
DONAHUE, T. J., REIF, R. (1986) ChemInform Abstract: Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Chemischer Informationsdienst, 17 (47) doi:10.1002/chin.198647379
Yew, Tri‐Rung, Reif, Rafael (1990) Insitudoping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 57 (19). 2010-2012 doi:10.1063/1.103993
Yew, Tri‐Rung, Reif, Rafael (1989) Selective silicon epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition using SiH4and SiH4/H2. Journal of Applied Physics, 65 (6). 2500-2507 doi:10.1063/1.342796
Comfort, James H., Reif, Rafael (1987) Insituarsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor deposition. Applied Physics Letters, 51 (19). 1536-1538 doi:10.1063/1.98627
Ohi, S., Burger, W. R., Reif, R. (1988) Enhanced electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition. Applied Physics Letters, 53 (10). 891-893 doi:10.1063/1.100106
Donahue, T. J. (1986) Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Journal of the Electrochemical Society, 133. 1691pp. doi:10.1149/1.2108995
Donahue, T. J. (1986) Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Journal of the Electrochemical Society, 133. 1697pp. doi:10.1149/1.2108996
Donahue, T. J. (1986) Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Journal of the Electrochemical Society, 133. 1701pp. doi:10.1149/1.2108998
Tsai, Julie A., Reif, Rafael (1995) Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition. Applied Physics Letters, 66 (14). 1809-1811 doi:10.1063/1.113329
Yew, Tri‐Rung, O, Kenneth, Reif, Rafael (1988) Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 52 (21). 1797-1799 doi:10.1063/1.99629
 
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