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Yew, Tri‐Rung, Reif, Rafael (1990) Insitudoping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 57 (19). 2010-2012 doi:10.1063/1.103993

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Reference TypeJournal (article/letter/editorial)
TitleInsitudoping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition
JournalApplied Physics Letters
AuthorsYew, Tri‐RungAuthor
Reif, RafaelAuthor
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103993Search in ResearchGate
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Mindat Ref. ID8492086Long-form Identifiermindat:1:5:8492086:9
GUID0
Full ReferenceYew, Tri‐Rung, Reif, Rafael (1990) Insitudoping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 57 (19). 2010-2012 doi:10.1063/1.103993
Plain TextYew, Tri‐Rung, Reif, Rafael (1990) Insitudoping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 57 (19). 2010-2012 doi:10.1063/1.103993
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Yew, Tri‐Rung, Reif, Rafael (1989) Selective silicon epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition using SiH4and SiH4/H2. Journal of Applied Physics, 65 (6). 2500-2507 doi:10.1063/1.342796
Yew, Tri‐Rung, O, Kenneth, Reif, Rafael (1988) Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 52 (21). 1797-1799 doi:10.1063/1.99629
Yew, Tri‐Rung, O, Kenneth, Reif, Rafael (1988) Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1797 (1988)]. Applied Physics Letters, 52 (24). 2061-2063 doi:10.1063/1.99663
Yew, Tri‐Rung, Reif, Rafael (1989) Silicon selective epitaxial growth at 800 °C using SiH4/H2assisted by H2/Ar plasma sputter. Applied Physics Letters, 55 (10). 1014-1016 doi:10.1063/1.101720
Yew, Tri‐Rung, Reif, Rafael (1990) High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2chemical vapor deposition using growth‐sputter cycles. Applied Physics Letters, 56 (21). 2105-2107 doi:10.1063/1.103232
Comfort, James H., Reif, Rafael (1987) Insituarsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor deposition. Applied Physics Letters, 51 (19). 1536-1538 doi:10.1063/1.98627
Chen, Cheng‐Hsien, Wan, Chi‐Meen, Yew, Tri‐Rung, Shieh, Ming‐Deng, Kung, Chung‐Yuan (1993) Silicon epitaxial growth at 300 °C by plasma enhanced chemical vapor deposition from SiH4/H2. Applied Physics Letters, 62 (24). 3126-3128 doi:10.1063/1.109625
Shieh, Ming‐Deng, Lee, Chiapyng, Chen, Cheng‐Hsien, Yew, Tri‐Rung, Kung, Chung‐Yuan (1993) Low temperature (313 °C) silicon epitaxial growth by plasma‐enhanced chemical vapor deposition with stainless steel mesh. Applied Physics Letters, 63 (9). 1252-1254 doi:10.1063/1.109787
Chen, Cheng-Hsien, Yew, Tri-Rung (1995) Silicon epitaxial growth by plasma enhanced chemical vapor deposition from at 165–350°C. Journal of Crystal Growth, 147 (3). 305-312 doi:10.1016/0022-0248(95)80011-5
Yew, Tri‐Rung, Reif, Rafael (1990) Low‐temperatureinsitusurface cleaning of oxide‐patterned wafers by Ar/H2plasma sputter. Journal of Applied Physics, 68 (9). 4681-4693 doi:10.1063/1.346180
Donahue, T. J., Reif, R. (1985) Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement. Journal of Applied Physics, 57 (8). 2757-2765 doi:10.1063/1.335418
 
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